Multi-ring active analogic protection for minority carrier injection suppression in Smart Power technology.

被引：21

作者：

Gonnard, O ^{[1
]}

Charitat, G ^{[1
]}

Lance, P ^{[1
]}

Suquet, M ^{[1
]}

Bafleur, M ^{[1
]}

Laine, JP ^{[1
]}

Peyre-Lavigne, A ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

来源：

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年

关键词：

D O I：

10.1109/ISPSD.2001.934627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Minority-carrier injection is one of the major causes of redesign in Smart Power technology. This parasitic current generated during the power stage turn off can be the source of dramatic failure such as latch-up. We propose in this paper a new protection structure able to significantly reduce the parasitic current flowing through the substrate. This new protection structure called MAAP (Multi-ring Active Analogic Protection) is self triggered by the injected current, is fully compatible with the standard technological process and reduces the parasitic current by 3 decades.

引用

页码：351 / 354

页数：4

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