Defect diffusion in hcp zirconium:: A kinetic Monte Carlo approach

被引:0
作者
Arévalo, C [1 ]
Caturla, MJ [1 ]
Perlado, JM [1 ]
机构
[1] Univ Politecn Madrid, Inst Fus Nucl, Madrid, Spain
来源
RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS | 2004年 / 792卷
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中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We have studied diffusion of defects produced during irradiation in help zirconium through a kinetic Monte Carlo model. The input data for these simulations is based on molecular dynamics calculations and from experiments whenever available. The initial cascade damage produced by recoils of 25 keV energy from molecular dynamics simulations has been followed for times of hours at a fixed temperature of 600K. We have calculated the number of freely migrating defects, the recombination ratio between vacancies and interstitials, the defects surviving in the bulk as well as the average cluster size for these remaining defects.
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页码:19 / 24
页数:6
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