Photosensing Behaviors of S and N co-doped Graphene Quantum Dot Sensitized ZnO Nanorod/Conducting Polymer Hybrid Devices

被引：0

作者：

Hmar, J. J. L. ^{[1
]}

Majumder, T. ^{[1
]}

Dhar, S. ^{[1
]}

Mondal, S. P. ^{[1
]}

机构：

[1] Natl Inst Technol, Dept Phys, Agartala 799046, India

来源：

2016 INTERNATIONAL CONFERENCE ON MICROELECTRONICS, COMPUTING AND COMMUNICATIONS (MICROCOM) | 2016年

关键词：

ZnO nanorods; Carbon Quantum Dots; conducting polymer; photocurrent; photosensing; THIN-FILMS; OXIDE; TRANSPARENT;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

ZnO nanorods have been grown on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrates by a hydrothermal method. Hybrid photosensing devices have been fabricated with S and N co-doped graphene quantum dot (SN-GQD) sensitized ZnO nanorods and a conducting polymer poly (3-hexylthiophene) (P3HT). The photoresponse behaviors have been investigated for hybrid devices with and without GQD attachment. SN-GQD sensitized nanorod based device demonstrated superior photoresponse and higher incident photon to electron conversion efficiency (IPCE) than pristine ZnO nanorods.

引用

页数：3

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