共 50 条
- [23] Recombination in tensile-strained In0.3Ga0.7As quantum well on InP Applied Physics A: Materials Science and Processing, 2000, 71 (02): : 153 - 155
- [26] Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell Semiconductors, 2020, 54 : 108 - 111
- [27] UNDOPED GASB GROWN ON THE STRUCTURE OF IN0.3GA0.7AS/GAAS STRAIN LAYER SUPERLATTICE BY MOCVD JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (02): : 207 - 211
- [28] DC and microwave characteristics of In-0.3(AlxGa1-x)(0.7)As/In0.3Ga0.7As heterojunction bipolar transistors grown on GaAs COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 649 - 654
- [29] Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7As Buried and Surface Quantum Dots Photonic Sensors, 2018, 8 : 213 - 219