Birefringence in In0.3Ga0.7As/GaAs Quantum Layers

被引:0
|
作者
Syrbu, N. [1 ]
Dorogan, A. [1 ]
Dorogan, V. [1 ]
Tiron, A. [1 ]
Zalamai, V. [2 ]
机构
[1] Tech Univ Moldova, Kishinev 2004, Moldova
[2] Moldavian Acad Sci, Inst Appl Phys, Kishinev 2028, Moldova
关键词
Quantum Wells; Birefringence; Isotropic Point; Refractive Indices; Optical Functions; Reflection Transmission Spectra; SPECTRA; DOTS;
D O I
10.1166/jno.2015.1734
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Reflection, wavelength modulated reflection and transmission spectra at P, P (S, S) and 45 degrees, 45 degrees (135 degrees, 135 degrees) polarizations for incidence angles close to normal and Brewster one were researched in quantum In0.3Ga0.7As layers. Isotropic wavelengths lambda(0)-1.137 mu m (1.09 eV), lambda(02)-1.11 mu m (1.12 eV) and lambda(03)-0.932 mu m (1.09 eV) had been revealed. The refractive indexes n for P, P (S, S) and 45 degrees, 45 degrees (135 degrees, 135 degrees) polarizations are intersecting in these wavelengths and theirs differences Delta n = n(PP) - n(SS) (Delta n = n (45 degrees) - n (135 degrees)) intersects the null axis. The isotropic wavelength (lambda(0)) is shifted towards the long wavelength region at Brewster angle in reference to the case of perpendicular incidence of light (phi = 7 degrees) on the QW surface.
引用
收藏
页码:211 / 218
页数:8
相关论文
共 50 条
  • [1] Exciton luminescence in In0.3Ga0.7As/GaAs quantum well heterostructures
    Syrbu, N.
    Dorogan, A.
    Dragutan, N.
    Vieru, T.
    Ursaki, V.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2011, 44 (01): : 202 - 206
  • [2] Electronic Structure of Elongated In0.3Ga0.7As/GaAs Quantum Dots
    Pieczarka, M.
    Musial, A.
    Podemski, P.
    Sek, G.
    Misiewicz, J.
    ACTA PHYSICA POLONICA A, 2013, 124 (05) : 809 - 812
  • [3] High electric field performance of Al0.3Ga0.7As/GaAs and Al0.3Ga0.7As/GaAs/In0.3Ga0.7As quantum well micro-Hall devices
    Kunets, VP
    Hoerstel, W
    Kostial, H
    Kissel, H
    Müller, U
    Tarasov, GG
    Mazur, YI
    Zhuchenko, ZY
    Masselink, WT
    SENSORS AND ACTUATORS A-PHYSICAL, 2002, 101 (1-2) : 62 - 68
  • [4] Characterization of In0.3Ga0.7As(N) quantum wells in (001) GaAs using TEM
    Meidia, H
    Cullis, AG
    Roberts, JS
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, (169): : 141 - 144
  • [5] Optical absorption of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dots
    Pattada, B
    Chen, JY
    Zhou, QY
    Manasreh, MO
    Hussein, ML
    Ma, W
    Salamo, GJ
    APPLIED PHYSICS LETTERS, 2003, 82 (15) : 2509 - 2511
  • [6] Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice
    Wu, J
    JOURNAL OF CRYSTAL GROWTH, 1998, 187 (3-4) : 363 - 366
  • [7] PHASE-SEPARATION IN IN0.3GA0.7AS EPITAXIAL LAYERS
    BEAM, EA
    MAHAJAN, S
    COLEMAN, JJ
    MATERIALS LETTERS, 1993, 16 (01) : 29 - 32
  • [8] Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots
    Wang, Guodong
    Liang, Baolai
    Juang, Bor-Chau
    Das, Aparna
    Debnath, Mukul C.
    Huffaker, Diana L.
    Mazur, Yuriy I.
    Ware, Morgan E.
    Salamo, Gregory J.
    NANOTECHNOLOGY, 2016, 27 (46)
  • [9] Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructures
    Syrbu, N. N.
    Dorogan, V.
    Dorogan, A.
    Vieru, T.
    Ursaki, V. V.
    Zalamai, V. V.
    SUPERLATTICES AND MICROSTRUCTURES, 2012, 52 (04) : 738 - 749
  • [10] EFFECT ON NONIDEAL DELTA-DOPING LAYERS IN AL0.3GA0.7AS/IN0.3GA0.7AS PSEUDOMORPHIC HETEROSTRUCTURES
    DEAVILA, SF
    SANCHEZROJAS, JL
    HIESINGER, P
    GONZALEZSANZ, F
    CALLEJA, E
    KOHLER, K
    JANTZ, W
    MUNOZ, E
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 427 - 432