Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

被引:56
作者
Korenev, V. L. [1 ]
Akimov, I. A. [1 ,2 ]
Zaitsev, S. V. [3 ]
Sapega, V. F. [1 ,4 ]
Langer, L. [2 ]
Yakovlev, D. R. [1 ,2 ]
Danilov, Yu. A. [5 ]
Bayer, M. [1 ,2 ]
机构
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Tech Univ Dortmund, D-44227 Dortmund, Germany
[3] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia
[4] St Petersburg State Univ, Spin Opt Lab, St Petersburg 198504, Russia
[5] Nizhnii Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod 603950, Russia
关键词
FERROMAGNET/SEMICONDUCTOR HYBRID; QUANTUM-WELLS; GAAS; MN; BARRIER;
D O I
10.1038/ncomms1957
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.
引用
收藏
页数:7
相关论文
共 29 条
[1]   Emission of spin waves by a magnetic multilayer traversed by a current [J].
Berger, L .
PHYSICAL REVIEW B, 1996, 54 (13) :9353-9358
[2]  
Ciuti C, 2002, PHYS REV LETT, V89, DOI 10.1103/PhysRevLetL89.156601
[3]   Terahertz spin precession and coherent transfer of angular momenta in magnetic quantum wells [J].
Crooker, SA ;
Baumberg, JJ ;
Flack, F ;
Samarth, N ;
Awschalom, DD .
PHYSICAL REVIEW LETTERS, 1996, 77 (13) :2814-2817
[4]  
Dietl T, 2010, NAT MATER, V9, P965, DOI [10.1038/nmat2898, 10.1038/NMAT2898]
[5]   Emission properties of InGaAs/GaAs heterostructures with δ⟨Mn⟩-doped barrier [J].
Dorokhin, M. V. ;
Danilov, Yu A. ;
Demina, P. B. ;
Kulakovskii, V. D. ;
Vikhrova, O. V. ;
Zaitsev, S. V. ;
Zvonkov, B. N. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (24)
[6]  
Dzhioev R. I., 1995, Physics of the Solid State, V37, P1929
[7]   Multiferroic and magnetoelectric materials [J].
Eerenstein, W. ;
Mathur, N. D. ;
Scott, J. F. .
NATURE, 2006, 442 (7104) :759-765
[8]   Spontaneous spin coherence in n-GaAs produced by ferromagnetic proximity polarization -: art. no. 121202 [J].
Epstein, RJ ;
Malajovich, I ;
Kawakami, RK ;
Chye, Y ;
Hanson, M ;
Petroff, PM ;
Gossard, AC ;
Awschalom, DD .
PHYSICAL REVIEW B, 2002, 65 (12) :1212021-1212024
[9]   Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier [J].
Hanbicki, AT ;
van 't Erve, OMJ ;
Magno, R ;
Kioseoglou, G ;
Li, CH ;
Jonker, BT ;
Itskos, G ;
Mallory, R ;
Yasar, M ;
Petrou, A .
APPLIED PHYSICS LETTERS, 2003, 82 (23) :4092-4094
[10]  
Johnson M., 2008, SPIN PHYS SEMICONDUC