Sample temperature profile during the excimer laser annealing of silicon nanoparticles

被引：14

作者：

Caninenberg, M. ^{[1
,2
]}

Verheyen, E. ^{[1
,2
]}

Kiesler, D. ^{[1
,2
]}

Stoib, B. ^{[3
,4
]}

Brandt, M. S. ^{[3
,4
]}

Benson, N. ^{[1
,2
]}

Schmechel, R. ^{[1
,2
]}

机构：

[1] Univ Duisburg Essen, Fac Engn, D-47057 Duisburg, Germany

[2] CENIDE, D-47057 Duisburg, Germany

[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[4] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany

来源：

OPTICS AND LASER TECHNOLOGY | 2015年 / 74卷

关键词：

Excimer laser annealing; Silicon nanoparticles; COMSOL Multiphysics model; THIN-FILM TRANSISTORS; THERMAL-CONDUCTIVITY; HEAT-CAPACITY; CRYSTALLIZATION;

D O I：

10.1016/j.optlastec.2015.05.020

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Based on the heat diffusion equation we describe the temperature profile of a silicon nanoparticle thin film on silicon during excimer laser annealing using COMSOL Multiphysics. For this purpose system specific material parameters are determined such as the silicon nanoparticle melting point at 1683 K, the surface reflectivity at 248 nm of 20% and the nanoparticle thermal conductivity between 0.3 and 1.2 W/m K. To validate our model, the simulation results are compared to experimental data obtained by Raman spectroscopy, SEM microscopy and electrochemical capacitance-voltage measurements (ECV). The experimental data are in good agreement with our theoretical findings and support the validity of the model. (C) 2015 Published by Elsevier Ltd.

引用

页码：132 / 137

页数：6

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