Carriers-mediated ferromagnetic enhancement in Al-doped ZnMnO dilute magnetic semiconductors

被引:33
作者
Saleem, Murtaza [1 ]
Siddiqi, Saadat A. [1 ,4 ]
Atiq, Shahid [1 ]
Anwar, M. Sabieh [2 ]
Hussain, Irshad [2 ]
Alam, Shahzad [3 ]
机构
[1] Univ Punjab, Ctr Excellence Solid State Phys, Lahore 54590, Pakistan
[2] Lahore Univ Management Sci LUMS, Sch Sci & Engn SSE, Opposite Sect U, Dha Lahore Cantt 54792, Pakistan
[3] Pakistan Council Sci & Ind Res PCSIR Labs Complex, Lahore, Pakistan
[4] COMSATS Inst Informat Technol, Interdisciplinary Res Ctr Biomed Mat IRCBM, Lahore, Pakistan
关键词
Diluted magnetic semiconductors; Al-doped ZnMnO; Sol-gel synthesis; Electrical properties; Magnetic properties; ROOM-TEMPERATURE FERROMAGNETISM; DOPING CONCENTRATION; THIN-FILMS; AB-INITIO; ZNO; NI; CO; ORIGIN;
D O I
10.1016/j.matchar.2011.08.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nano-crystalline Zn0.9-xMn0.05AlxO (x=0, 0.05, 0.10) dilute magnetic semiconductors (DMS) were synthesized by sol-gel derived auto-combustion. X-ray diffraction (XRD) analysis shows that the samples have pure wurtzite structure typical of ZnO without the formation of secondary phases or impurity. Crystallite sizes were approximated by Scherrer formula while surface morphology and grain sizes were measured by field emission scanning electron microscopy. Incorporation of Mn and Al into the ZnO structure was confirmed by energy-dispersive X-ray analysis. Temperature dependent electrical resistivity measurements showed a decreasing trend with the doping of Al in ZnMnO, which is attributable to the enhancement of free carriers. Vibrating sample magnetometer studies confirmed the presence of ferromagnetic behavior at room temperature. The results indicate that Al doping results in significant variation in the concentration of free carriers and correspondingly the carrier-mediated magnetization and room temperature ferromagnetic behavior, showing promise for practical applications. We attribute the enhanced saturation magnetization and electrical conductivity to the exchange interaction mediated by free electrons. (C) 2011 Elsevier Inc. All rights reserved.
引用
收藏
页码:1102 / 1107
页数:6
相关论文
共 41 条
[1]   No ferromagnetic properties in polycrystalline Al-doped Zn0.97Mn0.03O diluted magnetic semiconductor [J].
Brihi, N. ;
Bouaine, A. ;
Berbadj, A. ;
Schmerber, G. ;
Colis, S. ;
Dinia, A. .
THIN SOLID FILMS, 2010, 518 (16) :4549-4552
[2]   The effect of Al3+ co-doping on the structural, magnetic and optical properties of ZnCoO thin films [J].
Cao, P. ;
Bai, Y. ;
Zhao, D. X. ;
Shen, D. Z. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2011, 14 (01) :73-77
[3]   Effects of temperature and atmosphere on the magnetism properties of Mn-doped ZnO [J].
Chen, W ;
Zhao, LF ;
Wang, YQ ;
Miao, JH ;
Liu, S ;
Xia, ZC ;
Yuan, SL .
APPLIED PHYSICS LETTERS, 2005, 87 (04)
[4]   Hydrothermal synthesis Ni-doped ZnO nanorods with room-temperature ferromagnetism [J].
Cheng, Chuanwei ;
Xu, Guoyue ;
Zhang, Haiqian ;
Luo, Yan .
MATERIALS LETTERS, 2008, 62 (10-11) :1617-1620
[5]   Combustion process in the synthesis of ZnO-Bi2O3 [J].
de Sousa, VC ;
Morelli, MR ;
Kiminami, RHG .
CERAMICS INTERNATIONAL, 2000, 26 (05) :561-564
[6]   Synthesis and magnetic properties of Mn doped ZnO nanowires [J].
Deka, Sasanka ;
Joy, P. A. .
SOLID STATE COMMUNICATIONS, 2007, 142 (04) :190-194
[7]   Ferromagnetic semiconductors [J].
Dietl, T .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (04) :377-392
[8]   Investigation on Mn doped ZnO thin films grown by RF magnetron sputtering [J].
Elanchezhiyan, J. ;
Bhuvana, K. P. ;
Gopalakrishnan, N. ;
Balasubramanian, T. .
MATERIALS LETTERS, 2008, 62 (19) :3379-3381
[9]   Room-temperature ferromagnetism in Zn1-xMnxO [J].
Hakeem, A. M. Abdel .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 322 (06) :709-714
[10]   Ferromagnetic properties of Zn1-xMnxO epitaxial thin films [J].
Jung, SW ;
An, SJ ;
Yi, GC ;
Jung, CU ;
Lee, SI ;
Cho, S .
APPLIED PHYSICS LETTERS, 2002, 80 (24) :4561-4563