Effects of Ag doping on the photoluminescence of ZnO films grown on Si substrates

被引：111

作者：

Yang, Z ^{[1
]}

Zhang, ZY ^{[1
]}

Lin, BX ^{[1
]}

Fu, ZX ^{[1
]}

Xu, J ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2005年 / 109卷 / 41期

关键词：

D O I：

10.1021/jp0538058

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silver (Ag) doped and undoped ZnO films were grown on Si (100) substrates by the sol-gel process. Photoluminescence (PL) of two kinds of samples as a function of the excitation intensity has been measured, and PL intensities have been fitted by a power law. It is found that Ag doping increases the intensity of free emission from ZnO and does not change the position and the full width at half-maximum of the free exciton emission. In PL spectra of two kinds of samples under various excitation powers, no visible emission bands related to the deep levels were observed. These results reveal that doped Ag in ZnO films only enhances emission efficiency from free exciton recombination, not giving rise to new emissions.

引用

页码：19200 / 19203

页数：4

共 21 条

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