Frequency synthesis from 2 to 30 GHz using a 0.35 μm BiCMOS SiGe technology

被引：1

作者：

Coustou, A ^{[1
]}

Sie, M ^{[1
]}

Dubuc, D ^{[1
]}

Graffeuil, J ^{[1
]}

Tournier, E ^{[1
]}

Llopis, O ^{[1
]}

Plana, R ^{[1
]}

Boulanger, C ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

来源：

33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/EUMA.2003.340973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a 10/30 GHz MMIC Tripler, an X band VCO and a frequency divider using a 0.35 mum, 60 GHz-fMAX BiCMOS SiGe technology. The Tripler exhibits a conversion gain in the -5 dB range, and a low additive phase noise of -143 dBc/Hz at a frequency offset of 100 kHz is anticipated. In order to drive this Tripler, the design of a MMIC SiGe X-band VCO and its measured performance (0.8 GHz tuning range, -5 dBm output power and -87 dBc/Hz phase noise @ 100 kHz off carrier) is also reported. This X band VCO can also drive a frequency divider, developed in the same technology. The assembling of these circuits allows the design of a 5 GM frequency synthesizers. Measurements have showed a phase noise of -99 dBc/Hz at a frequency offset of 100 kHz. Therefore, this paper demonstrates the great capabilities of BiCMOS SiGe MMIC technology about frequency synthesis ranging from 2 GHz to 30 GHz.

引用

页码：395 / 398

页数：4

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