Frequency synthesis from 2 to 30 GHz using a 0.35 μm BiCMOS SiGe technology

In this paper, we present a 10/30 GHz MMIC Tripler, an X band VCO and a frequency divider using a 0.35 mum, 60 GHz-fMAX BiCMOS SiGe technology. The Tripler exhibits a conversion gain in the -5 dB range, and a low additive phase noise of -143 dBc/Hz at a frequency offset of 100 kHz is anticipated. In order to drive this Tripler, the design of a MMIC SiGe X-band VCO and its measured performance (0.8 GHz tuning range, -5 dBm output power and -87 dBc/Hz phase noise @ 100 kHz off carrier) is also reported. This X band VCO can also drive a frequency divider, developed in the same technology. The assembling of these circuits allows the design of a 5 GM frequency synthesizers. Measurements have showed a phase noise of -99 dBc/Hz at a frequency offset of 100 kHz. Therefore, this paper demonstrates the great capabilities of BiCMOS SiGe MMIC technology about frequency synthesis ranging from 2 GHz to 30 GHz.