Charge mobility increase in indium-molybdenum oxide thin films by hydrogen doping

被引：7

作者：

Catalan, S. ^{[1
]}

Alvarez-Fraga, L. ^{[1
]}

Salas, E. ^{[2
]}

Ramirez-Jimenez, R. ^{[3
]}

Rodriguez-Palomo, A. ^{[1
]}

de Andres, A. ^{[1
]}

Prieto, C. ^{[1
]}

机构：

[1] CSIC, ICMM, E-28049 Madrid, Spain

[2] ESRF, Spline CRG, F-38043 Grenoble, France

[3] Univ Carlos III Madrid, Escuela Politecn Super, Dept Fis, Ave Univ 30, Madrid 28911, Spain

来源：

APPLIED SURFACE SCIENCE | 2016年 / 386卷

关键词：

Transparent conductive oxides; Indium molybdenum oxide mobility; ELECTRICAL-PROPERTIES; TRANSPARENT; IN2O3; GLASS; GAS;

D O I：

10.1016/j.apsusc.2016.05.109

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The increase of charge mobility in transparent conductive indium molybdenum oxide (IMO) films is correlated with the presence of hydroxyl groups. The introduction of H-2 in the chamber during sputtering deposition compensates the excess charge introduced by cationic Mo doping of indium oxide either by oxygen or hydroxyl interstitials. Films present a linear increase of carrier mobility correlated with H-2 content only after vacuum annealing. This behavior is explained because vacuum annealing favors the removal of oxygen interstitials over that of hydroxyl groups. Since hydroxyl groups offer lower effective charge and smaller lattice distortions than those associated with interstitial oxygen, this compensation mechanism offers the conditions for the observed increase in mobility. Additionally, the short-range order around molybdenum is evaluated by extended X-ray absorption fine structure (EXAFS) spectroscopy, showing that Moo -1 is placed at the In site of the indium oxide. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：427 / 433

页数：7

共 35 条

[21] Electronic band structure of indium tin oxide and criteria for transparent conducting behavior [J].