Full-Band modelling of phonons in polytype Ge and Si

被引：3

作者：

Larroque, J. ^{[1
]}

Dollfus, P. ^{[1
]}

Saint-Martin, J. ^{[1
]}

机构：

[1] Univ Paris 11, Univ Paris Saclay, CNRS UMR 9001, C2N, F-91405 Orsay, France

来源：

20TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 20) | 2017年 / 906卷

关键词：

ELECTRON-TRANSPORT; NANOWIRE POLYTYPES; RAMAN-SCATTERING; SILICON;

D O I：

10.1088/1742-6596/906/1/012007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The phonon dispersions and their related properties are computed in polytype materials by using a semi-empirical approach called adiabatic bond charge model. Both hexagonal 2H and cubic 3C phases of Silicon and Germanium are investigated in terms of heat capacity, Raman shift and sound velocities for each phonon branch in all main directions.

引用

页数：4

共 13 条

[1] Crystal Phase Effects in Si Nanowire Polytypes and Their Homojunctions [J].

Amato, Michele ;

Kaewmaraya, Thanayut ;

Zobelli, Alberto ;

Palummo, Maurizia ;

Rurali, Riccardo .

NANO LETTERS, 2016, 16 (09) :5694-5700

[2] MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].

FISCHETTI, MV ;

LAUX, SE .

PHYSICAL REVIEW B, 1988, 38 (14) :9721-9745

[3] Monte Carlo simulations of phonon transport in nanoporous silicon and germanium [J].

Jean, V. ;

Fumeron, S. ;

Termentzidis, K. ;

Tutashkonko, S. ;

Lacroix, D. .

JOURNAL OF APPLIED PHYSICS, 2014, 115 (02)

[4] Silicon Nanowire Polytypes: Identification by Raman Spectroscopy, Generation Mechanism, and Misfit Strain in Homostructures [J].

Lopez, Francisco J. ;

Givan, Uri ;

Connell, Justin G. ;

Lauhon, Lincoln J. .

ACS NANO, 2011, 5 (11) :8958-8966

[5] Reduced Thermal Conductivity in Nanoengineered Rough Ge and GaAs Nanowires [J].

Martin, Pierre N. ;

Aksamija, Zlatan ;

Pop, Eric ;

Ravaioli, Umberto .

NANO LETTERS, 2010, 10 (04) :1120-1124

[6] First-principles determination of the structural, vibrational and thermodynamic properties of diamond, graphite, and derivatives [J].

Mounet, N ;

Marzari, N .

PHYSICAL REVIEW B, 2005, 71 (20)

[7] RAMAN SCATTERING BY SILICON AND GERMANIUM [J].

PARKER, JH ;

FELDMAN, DW ;

ASHKIN, M .

PHYSICAL REVIEW, 1967, 155 (03) :712-&

[8] THE ATOMIC HEAT OF SILICON BELOW 100-DEGREES-K [J].

PEARLMAN, N ;

KEESOM, PH .

PHYSICAL REVIEW, 1952, 88 (02) :398-405

[9] Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion [J].

Pop, E ;

Dutton, RW ;

Goodson, KE .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) :4998-5005

[10] RAMAN SCATTERING IN SILICON - (RAMAN SHIFT=523 CM-1 LASER BEAM E) [J].

RUSSELL, JP .

APPLIED PHYSICS LETTERS, 1965, 6 (11) :223-&

← 1 2 →