Status of hydrothermal growth of bulk ZnO: Latest issues and advantages

被引：68
作者：
Dem'yanets, L. N. [1 ]
Lyutin, V. I. [2 ]
机构：
[1] Russian Acad Sci, Inst Crystallog, Moscow, Russia
[2] Russian Res Inst Synth Mat, Aleksandrov, Russia
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 05期
关键词：
hydrothermal crystal growth; single crystal growth; oxides; ZnO; semiconducting II-VI materials;
D O I：
10.1016/j.jcrysgro.2007.11.145
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Zinc oxide single crystals with size up to 3 in were grown by hydrothermal method. Autoclaves with capacity up to 500 L were supplied by protective inner containers from Ti-based alloy. High quality of crystals was confirmed by the data of chemical, X-ray, spectroscopic, and optical microscopy analyses. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：993 / 999
页数：7
相关论文
共 45 条
[1]   Broadband ZnO single-nanowire light-emitting diode [J].
Bao, Jiming ;
Zimmler, Mariano A. ;
Capasso, Federico ;
Wang, Xiaowei ;
Ren, Z. F. .
NANO LETTERS, 2006, 6 (08) :1719-1722
[2]   Photoconductive UV detectors on sol-gel-synthesized ZnO films [J].
Basak, D ;
Amin, G ;
Mallik, B ;
Paul, GK ;
Sen, SK .
JOURNAL OF CRYSTAL GROWTH, 2003, 256 (1-2) :73-77
[3]   Zinc oxide: hydrothermal growth of nano- and bulk crystals and their luminescent properties [J].
Dem'yanets, LN ;
Li, LE ;
Uvarova, TG .
JOURNAL OF MATERIALS SCIENCE, 2006, 41 (05) :1439-1444
[4]   Chemistry and kinetics of ZnO growth from alkaline hydrothermal solutions [J].
Dem'yanets, LN ;
Kostomarov, DV ;
Kuz-mina, IP .
INORGANIC MATERIALS, 2002, 38 (02) :124-131
[5]   Solvothermal growth of ZnO [J].
Ehrentraut, Dirk ;
Sato, Hideto ;
Kagamitani, Yuji ;
Sato, Hiroki ;
Yoshikawa, Akira ;
Fukuda, Tsuguo .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2006, 52 (04) :280-335
[6]   GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces [J].
Gu, X ;
Reshchikov, MA ;
Teke, A ;
Johnstone, D ;
Morkoç, H ;
Nemeth, B ;
Nause, J .
APPLIED PHYSICS LETTERS, 2004, 84 (13) :2268-2270
[7]   Improvement in the crystalline quality of epitaxial GaN films grown by MOCVD by adopting porous 4H-SiC substrate [J].
Jeong, JK ;
Kim, HJ ;
Seo, HC ;
Kim, HJ ;
Yoon, E ;
Hwang, CS ;
Kim, HJ .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (04) :C43-C45
[8]   Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition -: art. no. 221907 [J].
Kawaguchi, Y ;
Ohta, J ;
Kobayashi, A ;
Fujioka, H .
APPLIED PHYSICS LETTERS, 2005, 87 (22) :1-3
[9]   ZnO rediscovered - once again!? [J].
Klingshirn, C ;
Hauschild, R ;
Priller, H ;
Decker, M ;
Zeller, J ;
Kalt, H .
SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (4-6) :209-222
[10]   Polarity control of GaN grown on ZnO (000(1)over-bar) surfaces [J].
Kobayashi, A ;
Kawaguchi, Y ;
Ohta, J ;
Fujioka, H ;
Fujiwara, K ;
Ishii, A .
APPLIED PHYSICS LETTERS, 2006, 88 (18)
12345