Beneficial Effect of Two-Step Annealing via Low Temperature of Vacancy Complexes in N-type Czochralski Silicon

被引：1

作者：

Hannachi, Mohamed ^{[1
]}

Amri, Chohdi ^{[1
]}

Hedfi, Hachem ^{[2
]}

Zarroug, Ahmed ^{[1
,3
]}

Ezzaouia, Hatem ^{[1
]}

机构：

[1] Ctr Res & Technol Energy, Lab Semicond Nanostruct & Adv Technol LSNTA, Tourist Route Soliman,BP 95, Hammam Lif 2050, Tunisia

[2] Univ Monastir, Natl Engn Sch, Ibn Eljazzar St, Monastir 5019, Tunisia

[3] Univ Arabe Sci, Ecole Super Privee Ingn & Etud Technol, Tunis, Tunisia

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2019年 / 48卷 / 01期

关键词：

N-type Czochralski silicon; minority carrier life time; FTIR; activation energy of annihilation; POINT-DEFECTS; P-TYPE; RECOMBINATION ACTIVITY; IRRADIATED SILICON; WAFERS; IRON;

D O I：

10.1007/s11664-018-6732-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a simple, time-saving and effective low-temperature approach to avoid the effect of intrinsic defects in n-type Czochralski silicon (Cz-Si) wafers. This approach consists of submitting Cz-Si wafers to two annealing steps. The first annealing step was conducted in the temperature range 100-200 degrees C to dissociate phosphorus-vacancy (P-V) defects. These defects were identified through the calculation of its activation energy (E-a) of annihilation. The second annealing step was conducted in the temperature range 300-400 degrees C to eliminate defects caused by vacancy-oxygen (V-O) pairs. The deactivation effect of the V-O pairs was highlighted using Fourier transform infrared spectroscopy and the effective minority carrier lifetime ((eff)). By combining these two annealing steps, we succeeded in enhancing (eff) from 180 to 2400s and the electrical parameters of the silicon solar cell.

引用

页码：509 / 516

页数：8

共 46 条

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