Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

被引：46
|
作者：
Aboelfotoh, MO
Kern, RS
Tanaka, S
Davis, RF
Harris, CI
机构：
[1] ROYAL INST TECHNOL,S-16440 KISTA,STOCKHOLM,SWEDEN
[2] IND MICROELECT CTR,S-16440 KISTA,STOCKHOLM,SWEDEN
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 19期
关键词：
D O I：
10.1063/1.117347
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal/A1N/n-type 6H-SiC(0001) heterostructures have been prepared by growing wurtzite AIN layers on vicinal 6H-SiC(0001) using gas-source molecular beam epitaxy, High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H-SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H-SiC surface. The interface is found to have a low density of trapped charges of -2 at room temperature without any postgrowth treatment. This value is comparable to 1x10(11) cm(-2) those reported for thermally grown and deposited oxides on n-type 6H-SiC(0001), and indicates the formation of a high quality interface. (C) 1996 American Institute of Physics.
引用
收藏
页码：2873 / 2875
页数：3
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