Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

被引：46
作者：
Aboelfotoh, MO
Kern, RS
Tanaka, S
Davis, RF
Harris, CI
机构：
[1] ROYAL INST TECHNOL,S-16440 KISTA,STOCKHOLM,SWEDEN
[2] IND MICROELECT CTR,S-16440 KISTA,STOCKHOLM,SWEDEN
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 19期
关键词：
D O I：
10.1063/1.117347
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal/A1N/n-type 6H-SiC(0001) heterostructures have been prepared by growing wurtzite AIN layers on vicinal 6H-SiC(0001) using gas-source molecular beam epitaxy, High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H-SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H-SiC surface. The interface is found to have a low density of trapped charges of -2 at room temperature without any postgrowth treatment. This value is comparable to 1x10(11) cm(-2) those reported for thermally grown and deposited oxides on n-type 6H-SiC(0001), and indicates the formation of a high quality interface. (C) 1996 American Institute of Physics.
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页码：2873 / 2875
页数：3
相关论文
共 18 条
[1]  
ABOELFOTOH MO, UNPUB
[2]   ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN ON N-TYPE 6H-SILICON CARBIDE [J].
ALOK, D ;
MCLARTY, PK ;
BALIGA, BJ .
APPLIED PHYSICS LETTERS, 1994, 64 (21) :2845-2846
[3]   SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J].
BARAFF, GA ;
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1977, 38 (05) :237-240
[4]   POLAR HETEROJUNCTION INTERFACES [J].
HARRISON, WA ;
KRAUT, EA ;
WALDROP, JR ;
GRANT, RW .
PHYSICAL REVIEW B, 1978, 18 (08) :4402-4410
[5]  
KERN RS, 1996, THESIS N CAROLINA ST
[6]   LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].
MORKOC, H ;
STRITE, S ;
GAO, GB ;
LIN, ME ;
SVERDLOV, B ;
BURNS, M .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398
[7]   MEASUREMENT OF N-TYPE DRY THERMALLY OXIDIZED 6H-SIC METAL-OXIDE-SEMICONDUCTOR DIODES BY QUASI-STATIC AND HIGH-FREQUENCY CAPACITANCE VERSUS VOLTAGE AND CAPACITANCE TRANSIENT TECHNIQUES [J].
NEUDECK, P ;
KANG, S ;
PETIT, J ;
TABIBAZAR, M .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (12) :7949-7953
[8]   Atomic arrangement at the AlN/SiC interface [J].
Ponce, FA ;
Van de Walle, CG ;
Northrup, JE .
PHYSICAL REVIEW B, 1996, 53 (11) :7473-7478
[9]   ELECTRICAL CHARACTERIZATION OF INSTABILITIES IN 6H SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J].
RAYNAUD, C ;
AUTRAN, JL ;
BALLAND, B ;
GUILLOT, G ;
JAUSSAUD, C ;
BILLON, T .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (02) :993-997
[10]   EPITAXIAL-GROWTH OF ALN BY PLASMA-ASSISTED, GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].
ROWLAND, LB ;
KERN, RS ;
TANAKA, S ;
DAVIS, RF .
JOURNAL OF MATERIALS RESEARCH, 1993, 8 (09) :2310-2314
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