Electrostatic Supercapacitors by Atomic Layer Deposition on Nanoporous Anodic Alumina Templates for Environmentally Sustainable Energy Storage

被引:9
|
作者
Javier Fernandez-Menendez, Luis [1 ]
Silvia Gonzalez, Ana [1 ]
Vega, Victor [1 ,2 ]
Manuel de la Prida, Victor [1 ]
机构
[1] Univ Oviedo, Fac Ciencias, Dept Fis, C Federico Garcia Lorca 18, Oviedo 33007, Asturias, Spain
[2] Univ Oviedo, Lab Membranas Nanoporosas, Edificio Serv Cient Tecn Severo Ochoa, Oviedo 33006, Asturias, Spain
来源
COATINGS | 2018年 / 8卷 / 11期
关键词
electrostatic supercapacitors; ALD; anodization; nanoporous alumina; energy storage; environmentally sustainable; METAL-OXIDES; GROWTH; ARRAYS;
D O I
10.3390/coatings8110403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, the entire manufacturing process of electrostatic supercapacitors using the atomic layer deposition (ALD) technique combined with the employment of nanoporous anodic alumina templates as starting substrates is reported. The structure of a usual electrostatic capacitor, which comprises a top conductor electrode/the insulating dielectric layer/and bottom conductor electrode (C/D/C), has been reduced to nanoscale size by depositing layer by layer the required materials over patterned nanoporous anodic alumina membranes (NAAMs) by employing the ALD technique. A thin layer of aluminum-doped zinc oxide, with 3 nm in thickness, is used as both the top and bottom electrodes' material. Two dielectric materials were tested; on the one hand, a triple-layer made by a successive combination of 3 nm each layers of silicon dioxide/titanium dioxide/silicon dioxide and on the other hand, a simple layer of alumina, both with 9 nm in total thickness. The electrical properties of these capacitors are studied, such as the impedance and capacitance dependences on the AC frequency regime (up to 10 MHz) or capacitance (180 nF/cm(2)) on the DC regime. High breakdown voltage values of 60 V along with low leakage currents (0.4 mu A/cm(2)) are also measured from DC charge/discharge RC circuits to determine the main features of the capacitors behavior integrated in a real circuit.
引用
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页数:18
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