Analog soft decoding for multi-level memories

被引:3
|
作者
Winstead, C [1 ]
机构
[1] Utah State Univ, Dept Elect & Comp Engn, Logan, UT 84322 USA
来源
35TH INTERNATIONAL SYMPOSIUM ON MULTIPLE-VALUED LOGIC, PROCEEDINGS | 2005年
关键词
D O I
10.1109/ISMVL.2005.8
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
This paper proposes analog soft-information decoding circuits for error protection in multi-level memories, providing stronger error protection than binary error-correcting codes. The cell capacitance can then be reduced without an increase in the soft error rate. Analog decoders perform soft-information decoding with very low area requirements. We introduce a multi-level analog interface circuit for analog decoding of MLDRAM signals. We also apply basic information theory to reveal the possibilities and limitations of coding in multi-level memories.
引用
收藏
页码:132 / 137
页数:6
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