The formation energy and interaction energy of point defects in ZrC

被引:19
|
作者
Tao, Xiaoma [1 ]
Chen, Hongmei [1 ]
Zhou, Yulu [1 ]
Peng, Qing [2 ]
Ouyang, Yifang [1 ]
机构
[1] Guangxi Univ, Sch Phys Sci & Technol, Guangxi Key Lab Proc Nonferrous Metall & Featured, Nanning 530004, Peoples R China
[2] King Fahd Univ Petr & Minerals, Phys Dept, Dhahran 31261, Saudi Arabia
基金
中国国家自然科学基金;
关键词
ZrC; Point defects; First-principles calculations; TRANSITION-METAL ELEMENTS; COATED FUEL-PARTICLES; SITE PREFERENCE; 1ST-PRINCIPLES; IRRADIATION; DIFFUSION; BEHAVIOR;
D O I
10.1016/j.jnucmat.2021.153235
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The formation energies of mono-vacancy and anti-site defect in ZrC have been calculated. The results are all in good agreement with experimental data and other theoretical reports. Then the formation energies of 28 transition metals (TMs) atoms substituting C or Zr atom, and locating at interstitial site have been obtained. Only Hf is energetically favourable to substitute Zr. The site preference of TMs in ZrC has also been investigated by using supercells and near neighbour Bragg Williams approximation. The formation energies of interstitial for 3d, 4d and 5d elements in ZrC indicate that all of the 28 TMs are hardly to locate the interstitial site in ZrC due to the large interstitial energies. A systematic study of interaction between the intrinsic vacancies of ZrC with TM impurity atoms has been performed by using first-principles calculations. The formation enthalpies, binding energies, electronic density of states and bond charge density for various defects and interactive configurations have been calculated. Finally, the results of site preference show that the interaction between the intrinsic defect and TM atom with CVa + TMC, CVa + TMZr , and ZrVa + TMZr configurations are almost attractive. Our results could be helpful in designing and improve the performance of ZrC alloy on demand. (C) 2021 Elsevier B.V. All rights reserved.
引用
收藏
页数:10
相关论文
共 50 条
  • [31] Deformation mechanism of the interaction of point defects in a random elastic medium
    Fraerman, AA
    PHYSICA A, 1997, 241 (1-2): : 102 - 104
  • [32] Helium induced microstructure damage, nano-scale grain formation and helium retention behaviour of ZrC
    Agarwal, Shradha
    Bhattacharya, Arunodaya
    Trocellier, Patrick
    Zinkle, Steven J.
    ACTA MATERIALIA, 2019, 163 : 14 - 27
  • [33] Associates formation in CdTe at high levels of native point defects
    Savitsky, A
    Parfenyuk, O
    Ilashchuk, M
    Fochouk, P
    Burachek, V
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 1155 - 1159
  • [34] Interaction of Impurity and Intrinsic Defects in Forsterite and Its Role in the Formation of Spectral and Luminescence Properties
    Dudnikova, V. B.
    Zharikov, E. V.
    Urusov, V. S.
    PHYSICS OF THE SOLID STATE, 2011, 53 (11) : 2227 - 2239
  • [35] Energy deposition and formation of nanostructures in the interaction of highly charged xenon ions with gold nanolayers
    Stabrawa, I.
    Banas, D.
    Kubala-Kukus, A.
    Jablonski, L.
    Jagodzinski, P.
    Sobota, D.
    Szary, K.
    Pajek, M.
    Skrzypiec, K.
    Mendyk, E.
    Borysiewicz, M.
    Majkic, M. D.
    Nedeljkovic, N. N.
    VACUUM, 2023, 210
  • [36] Charged point defects in semiconductors
    Seebauer, Edmund G.
    Kratzer, Meredith C.
    MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2006, 55 (3-6) : 57 - 149
  • [37] Point defects in monolayer borophosphene
    Haldar, Sandip
    MATERIALS TODAY COMMUNICATIONS, 2023, 36
  • [38] Atomic scale simulation of extended defects formation under high energy electron irradiation:: space distribution
    Amghar, A
    Djafari-Rouhani, M
    Idrissi-Saba, H
    Gué, AM
    Estève, D
    PHYSICA B, 2001, 304 (1-4): : 368 - 376
  • [39] Paramagnetic intrinsic point defects in nm-sized silica particles:: Interaction with SiO at elevated temperatures
    Clemer, K.
    Stesmans, A.
    Afanas'ev, V. V.
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2007, 27 (5-8): : 1475 - 1478
  • [40] Interaction between implanted fluorine atoms and point defects in preamorphized silicon
    Impellizzeri, G
    dos Santos, JHR
    Mirabella, S
    Napolitani, E
    Carnera, A
    Priolo, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 230 : 220 - 224