2D numerical modeling of SiGe structures

被引：0

作者：

Amon, S ^{[1
]}

Ferk, B ^{[1
]}

Vrtacnik, D ^{[1
]}

Resnik, D ^{[1
]}

Krizaj, D ^{[1
]}

Sokolic, S ^{[1
]}

机构：

[1] Univ Ljubljana, Fac Elect Engn, Lab Elect Devices, Ljubljana 1000, Slovenia

来源：

MELECON '98 - 9TH MEDITERRANEAN ELECTROTECHNICAL CONFERENCE, VOLS 1 AND 2 | 1998年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

2D modeling of SiGe devices and circuits is reviewed. SiGe HBT and SiGe ECL circuit are studied as an example. Numerical simulation is performed with Heterojunction Device and Circuit Analysis Advanced Application Modules in general purpose 2D device simulator MEDICI. Calculated results demonstrate that MEDICI can be used for advanced simulation tasks, which cannot be performed by more specialized simulators. Development and application of improved, more accurate temperature dependent models for SiGe base transport properties will result in accurate simulation and optimization of SiGe devices and circuits.

引用

页码：326 / 329

页数：4

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