Measurements of secondary electrons emitted from conductive substrates under high-current metal ion bombardment

被引:13
作者
Anders, A [1 ]
Yushkov, GY
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[2] Russian Acad Sci, Inst High Current Elect, Tomsk 634050, Russia
[3] State Univ Control Syst & Radioelect, Tomsk 634050, Russia
关键词
secondary electron yield; plasma immersion ion implantation; vacuum arc;
D O I
10.1016/S0257-8972(00)01038-0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The yield of secondary electrons induced by primary ion impact is measured for conditions relevant to metal plasma immersion ion implantation. A vacuum are ion source provided metal ions in the energy range 5-175 keV. The target materials were placed in a Faraday cup, and the secondary electron yields were determined by measuring the current of the Faraday cup with and without electron-suppressing magnetic field. By using a time of flight method, yields for individual ion charge states could be determined. The yields found depend on the ion species, their energy, and the target material. They are in the range 1-10 electrons per ion for the conditions investigated. It was found that the yields are almost independent of the ion charge state and increase with increasing ion energy. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:111 / 116
页数:6
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