Temperature dependence of the exciton gap in monocrystalline CuGaS2

被引：12

作者：

Levcenco, S. ^{[1
]}

Doka, S. ^{[2
]}

Tezlevan, V. ^{[1
]}

Marron, D. Fuertes ^{[3
]}

Kulyuk, L. ^{[1
]}

Schedel-Niedrig, T. ^{[2
]}

Lux-Steiner, M. Ch. ^{[2
]}

Arushanov, E. ^{[1
,2
]}

机构：

[1] Moldavian Acad Sci, Inst Appl Phys, MD-2028 Kishinev, Moldova

[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

[3] Univ Politecn Madrid, Inst Energia Solar ETSIT, E-28040 Madrid, Spain

来源：

PHYSICA B-CONDENSED MATTER | 2010年 / 405卷 / 17期

关键词：

Chalcopyrite; Photoluminescence Spectroscopy; OPTICAL-PROPERTIES; EPITAXIAL CUGAS2; SINGLE-CRYSTALS; PHOTOLUMINESCENCE; SI(111); ABSORPTION; AGGAS2; LAYERS; MODEL;

D O I：

10.1016/j.physb.2010.05.037

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Single crystals of CuGaS2 have been grown by chemical vapour transport. Their near-band gap photoluminescence properties were investigated in the temperature range of 10-300 K. The variation of the exciton gap energy with temperature was studied by means of a three-parameter thermodynamic model, the Einstein model and the Passler model. Values of the band gap at T=0 K, of a dimensionless constant related to the electron-phonon coupling, and of an effective and a cut-off phonon energy have been estimated. It has also been found that the major contribution of phonons to the shift of E-g as a function of Tin CuGaS2 is mainly from optical phonons. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3547 / 3550

页数：4

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