Mid-IR Gain Media Based on Transition Metal Doped II-VI Chalcogenides

被引：4

作者：

Mirov, S. B. ^{[1
,2
,3
]}

Fedorov, V. V. ^{[1
,2
,3
]}

Martyshkin, D. V. ^{[1
,2
,3
]}

Moskalev, I. S. ^{[3
]}

Mirov, M. S. ^{[3
]}

Gafarov, O. ^{[1
,2
]}

Martinez, A. ^{[1
,2
]}

Peppers, J. ^{[1
,2
]}

Smolski, V. ^{[3
]}

Vasilyev, S. ^{[3
]}

Gapontsev, V. ^{[4
]}

机构：

[1] Univ Alabama Birmingham, Ctr Opt Sensors & Spect, CH 310,1300 Univ Blvd, Birmingham, AL 35294 USA

[2] Univ Alabama Birmingham, Dept Phys, CH 310,1300 Univ Blvd, Birmingham, AL 35294 USA

[3] IPG Photon MidIR Lasers, 1500 1st Ave N,Unit 39, Birmingham, AL 35203 USA

[4] IPG Photon Corp, 50 Old Webster Rd, Oxford, MA 01540 USA

来源：

OPTICAL COMPONENTS AND MATERIALS XIII | 2016年 / 9744卷

关键词：

II-VI; transition metal doped chalcogenide; middle infrared laser materials; DIFFUSION; LASER; ZNSE; ABSORBER; CR2+;

D O I：

10.1117/12.2212822

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Progress in fabrication and mid-IR lasing of Cr and Fe thermal-diffusion and radiation enhanced thermal diffusion doped II-VI binary and ternary polycrystals is reported. We demonstrate novel design of mid-IR Fe: ZnSe and Cr:ZnSe/S solid state lasers with significant improvement of output average power up to 35W@4.1 mu m and 57W@2.5 mu m and 20W@2.94 mu m. We report significantly improved output characteristics of polycrystalline Cr:ZnS/Se lasers in gain-switched regime: 16 mJ at 200 Hz, pulse duration 5 ns with tunability over 2400-3000 nm as well as Kerr-Lens-Mode-Locked regime in terms of average power (up to 2 W), peak power and pulse energy (0.5 MW and 24 nJ, respectively), and pulse duration (less than 29 fs).

引用

页数：8

共 50 条

[1] New Mid-IR Gain Media Based on Transition Metal Doped II-VI Ternary - Quaternary Compounds and Glassy Composites
Martyshkin, D. V.
Goldstein, J. T.
Camata, R. P.
Fedorov, V. V.
Mirov, S. B.
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2011,
[2] Recent progress in transition metal doped II-VI mid-IR lasers
Mirov, Sergey B.
Fedorov, Vladimir V.
Moskalev, Igor S.
Martyshkin, Dmitri
Gallian, Andrew
Kim, Changsu
LASER SOURCE TECHNOLOGY FOR DEFENSE AND SECURITY III, 2007, 6552
[3] Recent progress in transition-metal-doped II-VI mid-IR lasers
Mirov, Sergey B.
Fedorov, Vladimir V.
Moskalev, Igor S.
Martyshkin, Dmitri V.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2007, 13 (03) : 810 - 822
[4] Progress in Mid-IR Lasers Based on Cr and Fe-Doped II-VI Chalcogenides
Mirov, Sergey B.
Fedorov, Vladimir V.
Martyshkin, Dmitry
Moskalev, Igor S.
Mirov, Mike
Vasilyev, Sergey
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2015, 21 (01) : 292 - 310
[5] Mid-IR luminescence of nanocrystalline II-VI semiconductors doped with transition metal ions
Kim, C.
Martyshkin, D. V.
Fedorov, V. V.
Moskaley, I. S.
Mirov, S. B.
SPECTROSCOPY, 2007, 22 (09) : 32 - +
[6] New regimes of excitation and mid-IR lasing of transition metal doped II-VI crystals
Mirov, Sergey
Fedorov, Vladimir
MID-INFRARED COHERENT SOURCES AND APPLICATIONS, 2008, : 261 - 314
[7] Frontiers of Mid-IR Lasers Based on Transition Metal Doped Chalcogenides
Mirov, Sergey B.
Moskalev, Igor S.
Vasilyev, Sergey
Smolski, Viktor
Fedorov, Vladimir V.
Martyshkin, Dmitry
Peppers, Jeremy
Mirov, Mike
Dergachev, Alex
Gapontsev, Valentin
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2018, 24 (05)
[8] Mid-IR photoluminescence and lasing of chromium doped II-VI quantum dots
Martyshkin, D. V.
Kim, C.
Moskalev, I. S.
Fedorov, V. V.
Mirov, S. B.
PHOTON PROCESSING IN MICROELECTRONICS AND PHOTONICS VII, 2008, 6879
[9] Crystal field engineering of transition metal doped II-VI ternary and quaternary semiconductors for mid-IR tunable laser applications
Martinez, A. D.
Martyshkin, D. V.
Camata, R. P.
Fedorov, V. V.
Mirov, S. B.
OPTICAL MATERIALS EXPRESS, 2015, 5 (09): : 2036 - 2046
[10] Frontiers of mid-infrared lasers based on transition metal doped II-VI semiconductors
Mirov, S.
Fedorov, V.
Moskalev, I.
Mirov, M.
Martyshkin, D.
JOURNAL OF LUMINESCENCE, 2013, 133 : 268 - 275

← 1 2 3 4 5 →