Modeling of experimental reflectance for porous silicon multilayers

被引:0
作者
Hernández-Rodríguez, C [1 ]
Hernández, VM [1 ]
Capuj, NE [1 ]
Marrero, N [1 ]
Guerrero-Lemus, R [1 ]
机构
[1] Univ La Laguna, Dept Fis Basica, San Cristobal la Laguna 38204, Tenerife, Spain
来源
NANOTECHNOLOGY | 2003年 / 5118卷
关键词
Multilayers; reflectance; silicon porous; dielectric Bragg reflector;
D O I
10.1117/12.498950
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work exposes a computational simulation method to describe the infrared reflectance on periodical and effective media. We use this method in order to improve the parameters to design porous silicon multilayers (PSM). The procedure of the computer program takes into account the complex refractive index of each layer by using the effective dielectric constant for different porosities. The lateral inhomogeneity of the thickness for the successive layers are simulated using the thickness as a random function around one mean value. Averaging all the reflectance values and iterating the computational process for different random parameters gives the reflectance results of the model. We also show in this work the experimental reflectance spectrum for a PSM dielectric Bragg reflector. The comparison of the experimental spectrum and the simulations shows a good agreement in bandwidth and position of the maximum reflectance band.
引用
收藏
页码:577 / 586
页数:10
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