35 GHz dielectric resonator stabilised Gunn oscillator

被引：1
作者：
Prasad, CD
Sarin, SS
Singh, D
机构：
[1] Defence Electronics Applications Laboratory (DEAL), Dehradun 248001, Raipur Road
来源：
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1996年 / 17卷 / 02期
关键词：
D O I：
10.1007/BF02088162
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 35 GHz dielectric resonator oscillator(DRO) using GaAs Gunn diode in microstrip configuration has been designed and developed. The oscillator, with an integral waveguide-to-microstrip transition, delivered an output greater than 18 dBm. Phase noise of the oscillator is found to be better than -80 dBc/Hz at 100 KHz away from the carrier. A frequency drift of about +/- 25 MHz has been observed over the temperature range from -10 degrees C to 50 degrees C.
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页码：393 / 402
页数：10
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