Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes

被引：57

作者：

Han, Dong-Pyo ^{[1
]}

Oh, Chan-Hyoung ^{[1
]}

Kim, Hyunsung ^{[1
]}

Shim, Jong-In ^{[1
]}

Kim, Kyu-Sang ^{[2
]}

Shin, Dong-Soo ^{[3
,4
]}

机构：

[1] Hanyang Univ, Dept Elect & Commun Engn, Seoul 133791, South Korea

[2] Sangji Univ, Dept Appl Phys & Elect, Wonju 220702, South Korea

[3] Hanyang Univ, Dept Appl Phys, Seoul 133791, South Korea

[4] Hanyang Univ, Dept Bionanotechnol, Seoul 133791, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

Dot emission; light-emitting diodes (LEDs); threading dislocations (TDs); variable-range hopping (VRH); EMISSION; GAN;

D O I：

10.1109/TED.2014.2381218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Local dot-like emissions in InGaN/GaN-based light-emitting diodes under both forward and reverse biases are investigated by carefully examining their locations and electroluminescence spectra. The effects of dot-like emissions on electrical and optical performances are also discussed. From the properties of the leakage-component dependence on electric field and temperature, the dominant reverse leakage mechanism is investigated as a function of bias from 100 to 400 K. It is concluded that the underlying mechanism of local dot-like emissions are related to threading dislocations under both reverse and forward biases.

引用

页码：587 / 592

页数：6

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