Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

被引：5
|
作者：
Cárabe, J
Fernández, MG
Ferrando, A
Fuentes, J
Gandía, JJ
Josa, MI
Molinero, A
Oller, JC
Arce, P
Calvo, E
Figueroa, CF
García, N
Matorras, F
Rodrigo, T
Vila, I
Virto, AL
Fenyvesi, A
Molnar, J
Sohler, D
机构：
[1] CIEMAT, E-28040 Madrid, Spain
[2] Univ Cantabria, CSIC, Inst Fis Cantabria, E-39005 Santander, Spain
[3] Inst Nucl Res ATOMKI, Debrecen, Hungary
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2000年 / 455卷 / 02期
关键词：
D O I：
10.1016/S0168-9002(00)00516-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with Co-60 photons (up to 100 kGy) and fast neutrons (up to 10(15) cm(-2)), and the subsequent change in their performance has been measured. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：361 / 368
页数：8
相关论文
共 50 条
  • [31] Status of the ALMY semitransparent, amorphous silicon sensors for optical position monitoring systems
    Bauer, F
    Danielyan, V
    Horvat, S
    Kroha, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 504 (1-3): : 166 - 169
  • [32] ELECTRON LOCALIZATION IN MODELS OF HYDROGENATED AMORPHOUS-SILICON AND PURE AMORPHOUS-SILICON
    HOLENDER, JM
    MORGAN, GJ
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 1994, 2 (01) : 1 - 8
  • [33] PHOTOEMISSION OF AMORPHOUS-SILICON
    SMITH, RJ
    STRONGIN, M
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 453 - 453
  • [34] AMORPHOUS-SILICON PHOTOTRANSISTORS
    KANEKO, Y
    KOIKE, N
    TSUTSUI, K
    TSUKADA, T
    APPLIED PHYSICS LETTERS, 1990, 56 (07) : 650 - 652
  • [35] CRYSTALLIZATION IN AMORPHOUS-SILICON
    ZELLAMA, K
    GERMAIN, P
    SQUELARD, S
    BOURGOIN, JC
    THOMAS, PA
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6995 - 7000
  • [36] HYDROGEN IN AMORPHOUS-SILICON
    PEERCY, PS
    NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 337 - 349
  • [37] DOPING OF AMORPHOUS-SILICON
    GOLIKOVA, OA
    MEZDROGINA, MM
    KUDOYAROVA, VK
    SEREGIN, PP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (08): : 889 - 891
  • [38] AMORPHOUS-SILICON ELECTRONICS
    STREET, RA
    MRS BULLETIN, 1992, 17 (11) : 70 - 76
  • [39] AMORPHOUS-SILICON TFT
    SUZUKI, K
    IKEDA, M
    KIKUCHI, M
    JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1983, 6 : 252 - 265
  • [40] ELECTRODEPOSITION OF AMORPHOUS-SILICON
    TAKEDA, Y
    YAMAMOTO, O
    DENKI KAGAKU, 1984, 52 (07): : 460 - 463
12345