Far infrared (THz) electroluminescence from Si/SiGe quantum cascade heterostructures

被引:0
作者
Lynch, SA [1 ]
Paul, DJ [1 ]
Bates, R [1 ]
Norris, DJ [1 ]
Cullis, AG [1 ]
Ikonic, Z [1 ]
Kelsall, RW [1 ]
Harrison, P [1 ]
Arnone, DD [1 ]
Pidgeon, CR [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源
OPTO-IRELAND 2002: OPTICS AND PHOTONICS TECHNOLOGIES AND APPLICATIONS, PTS 1 AND 2 | 2003年 / 4876卷
关键词
silicon; germanium; terahertz; infrared; quantum cascade; electroluminescence;
D O I
10.1117/12.463738
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
There is strong interest in the development of sources that emit radiation in the far infrared (1-10 THz) frequency range for applications which include early detection of skin cancer, dental imaging, telecommunications, security scanning, gas sensing, astronomy, molecular spectroscopy, and the possible detection of biological weapons. While a number of THz sources are available, there are at present no compact, efficient, cheap and practical high-power solid-state sources such as light emitting diodes or lasers. Silicon is an excellent candidate for such a THz source since the lack of polar optical phonon scattering makes it an inherently low loss material at these frequencies. Furthermore, since over 97% of all microelectronics is presently silicon based; the realisation of a silicon based emitter/laser could potentially allow integration with conventional silicon-based microelectronics. In this paper THz electroluminescence from a Si/SiGe quantum cascade structure operating significantly above liquid helium temperatures is demonstrated. Fourier transform infrared spectroscopy was performed using step scan spectrometer with a liquid helium cooled Si-bolometer for detection. Spectra are presented demonstrating intersubband electroluminescence at a number of different frequencies. These spectral features agree very well with the theoretically calculated intersubband transitions predicted for the structure.
引用
收藏
页码:140 / 149
页数:10
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