Black Phosphorus/Molybdenum Diselenide Heterojunction-Based Photodetector

被引：14

作者：

Abderrahmane, Abdelkader ^{[1
]}

Woo, Changlim ^{[1
]}

Ko, Pil Ju ^{[1
]}

机构：

[1] Chosun Univ, Dept Elect Engn, 375 Seosuk Dong, Gwangju 501759, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2021年 / 50卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Two-dimensional (2D) materials; black phosphorus (BP); molybdenum diselenide (MoSe2); photodetector; MOSE2;

D O I：

10.1007/s11664-021-09097-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we report the electrical and optoelectronic performance of two-dimensional (2D) molybdenum diselenide (MoSe2) and its heterojunction with black phosphorus (BP). BP, MoSe2, and the heterojunction BP/MoSe2 showed contact with gold electrodes, respectively demonstrating ohmic, Schottky, and p-n diode-like behavior with an ideality factor of 0.36 and an I-ON/I-OFF current ratio of approximately 10. The heterojunction (BP/MoSe2) showed slightly better performance compared with that of 2D multilayered MoSe2, with almost stable photoresponsivity and specific detectivity at negative bias voltage. The photoresponsivity, external quantum efficiency, normalized photocurrent-to-dark current ratio, and specific detectivity were measured as 3.2 mAW(-1), 31.4 x10(12) W-1, 0.74%, and 1.4 x10(9) cmHz(1/2)W(-1), respectively, at a bias voltage of -0.25 V. The BP/MoSe2 heterojunction showed a photovoltaic effect with a V-CO of 0.16 V and I-SC of 14.4 nA under illumination at a wavelength of 532 nm and power of 12.36 mu W. The BP/MoSe2 heterojunction, reported in this study, can be used as self-powered photodetector. [GRAPHICS]

引用

页码：5713 / 5720

页数：8

共 33 条

[1] High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors [J].

Abderrahmane, A. ;

Ko, P. J. ;

Thu, T. V. ;

Ishizawa, S. ;

Takamura, T. ;

Sandhu, A. .

NANOTECHNOLOGY, 2014, 25 (36)

[2] Thickness Dependence of Optoelectronic Properties of Molybdenum Diselenide-Based Nanodevices [J].

Achouri, Mohamed Malik ;

Tab, Abdelkader ;

Abderrahmane, Abdelkader ;

Lee, Dong Jin ;

Oh, Jong-Min ;

Kim, Nam-Hoon ;

Ko, Pil Ju .

JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (11) :7025-7030

[3] Room temperature wideband tunable photoluminescence of pulsed thermally annealed layered black phosphorus [J].

Alodan, Sarah A. ;

Gorham, Justin M. ;

DelRio, Frank W. ;

Alsaffar, Fadhel ;

Aljalham, Ghadeer ;

Alolaiyan, Olaiyan ;

Zhou, Chongwu ;

Amer, Moh R. .

NANOPHOTONICS, 2020, 9 (14) :4253-4264

[4] Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating [J].

Buscema, Michele ;

Groenendijk, Dirk J. ;

Steele, Gary A. ;

van der Zant, Herre S. J. ;

Castellanos-Gomez, Andres .

NATURE COMMUNICATIONS, 2014, 5

[5] Isolation and characterization of few-layer black phosphorus [J].

Castellanos-Gomez, Andres ;

Vicarelli, Leonardo ;

Prada, Elsa ;

Island, Joshua O. ;

Narasimha-Acharya, K. L. ;

Blanter, Sofya I. ;

Groenendijk, Dirk J. ;

Buscema, Michele ;

Steele, Gary A. ;

Alvarez, J. V. ;

Zandbergen, Henny W. ;

Palacios, J. J. ;

van der Zant, Herre S. J. .

2D MATERIALS, 2014, 1 (02)

[6] Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions [J].

Chiu, Ming-Hui ;

Tseng, Wei-Hsuan ;

Tang, Hao-Ling ;

Chang, Yung-Huang ;

Chen, Chang-Hsiao ;

Hsu, Wei-Ting ;

Chang, Wen-Hao ;

Wu, Chih-I ;

Li, Lain-Jong .

ADVANCED FUNCTIONAL MATERIALS, 2017, 27 (19)

[7] A Dual-Band Multilayer InSe Self-Powered Photodetector with High Performance Induced by Surface Plasmon Resonance and Asymmetric Schottky Junction [J].

Dai, Mingjin ;

Chen, Hongyu ;

Feng, Rui ;

Feng, Wei ;

Hu, Yunxia ;

Yang, Huihui ;

Liu, Guangbo ;

Chen, Xiaoshuang ;

Zhang, Jia ;

Xu, Cheng-Yan ;

Hu, PingAn .

ACS NANO, 2018, 12 (08) :8739-8747

[8] Charge trap memory based on few-layer black phosphorus [J].

Feng, Qi ;

Yan, Faguang ;

Luo, Wengang ;

Wang, Kaiyou .

NANOSCALE, 2016, 8 (05) :2686-2692

[9] Design and construction of ultra-thin MoSe2 nanosheet-based heterojunction for high-speed and low-noise photodetection [J].

Geng, Xiangshun ;

Yu, Yongqiang ;

Zhou, Xiaoli ;

Wang, Chunde ;

Xu, Kewei ;

Zhang, Yan ;

Wu, Chunyan ;

Wang, Li ;

Jiang, Yang ;

Yang, Qing .

NANO RESEARCH, 2016, 9 (09) :2641-2651

[10] Black Phosphorus Mid-Infrared Photodetectors with High Gain [J].

Guo, Qiushi ;

Pospischil, Andreas ;

Bhuiyan, Maruf ;

Jiang, Hao ;

Tian, He ;

Farmer, Damon ;

Deng, Bingchen ;

Li, Cheng ;

Han, Shu-Jen ;

Wang, Han ;

Xia, Qiangfei ;

Ma, Tso-Ping ;

Mueller, Thomas ;

Xia, Fengnian .

NANO LETTERS, 2016, 16 (07) :4648-4655

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