Dislocation climb in two-dimensional discrete dislocation dynamics

被引：56
|
作者：
Davoudi, Kamyar M. [1 ]
Nicola, Lucia [2 ]
Vlassak, Joost J. [1 ]
机构：
[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Delft Univ Technol, Dept Mat Sci & Engn, NL-2628 CD Delft, Netherlands
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 10期
基金：
美国国家科学基金会;
关键词：
FREESTANDING THIN-FILMS; PLASTIC-DEFORMATION; BULK DIFFUSION; SIMULATIONS; CREEP; CRYSTALS; STRENGTH; STRESS; LENGTH;
D O I：
10.1063/1.4718432
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, dislocation climb is incorporated in a two-dimensional discrete dislocation dynamics model. Calculations are carried out for polycrystalline thin films, passivated on one or both surfaces. Climb allows dislocations to escape from dislocation pile-ups and reduces the strain-hardening rate, especially for fully passivated films. Within the framework of this model, climb modifies the dislocation structures that develop during plastic deformation and results in the formation of pile-ups on slip planes that do not contain any dislocation sources. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718432]
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页数：7
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