Cryogenic characteristics of sub-100-nm-gate AlGaN/GaN MIS-HEMTs

被引：6

作者：

Endoh, Akira ^{[1
]}

Watanabe, Issei ^{[1
]}

Yamashita, Yoshimi ^{[2
]}

Mimura, Takashi ^{[1
,2
]}

Matsui, Toshiaki ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukui Kitamachi, Koganei, Tokyo 1848795, Japan

[2] Fujitsu Lab Ltd, Kanagawa 2430197, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

D O I：

10.1002/pssc.200778427

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We measured DC and RF characteristics at 300 and 16 K of sub-100-nm-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) that had SiN/SiO2/SiN triple-layer insulators. The drain-source current and the maximum transconductance increased as expected. We observed an increase of 14 to 28% in the value of cutoff frequency f(T) at 16 K over that at 300 K. At 16 K, we obtained a maximum f(T) of 176 GHz at a gate length L. of 45 nm. We estimated the average electron velocity under the gate by a transit time analysis. The average velocities were 2.2 x 10(7) cm/s at 300 K and 2.7 x 10(7) cm/s at 16 K.

引用

页码：1917 / +

页数：2

共 10 条

[1]

ANDO Y, 2001, IEDM, P381

[2] Fabrication of sub-50-nm-gate i-AlGaN/GaN HEMTs on sapphire [J].

Endoh, A ;

Yamashita, Y ;

Ikeda, K ;

Higashiwaki, M ;

Hikosaka, K ;

Matsui, T ;

Hiyamizu, S ;

Mimura, T .

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07) :2368-2371

[3] High performance AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors fabricated using SiN/SiO2/SiN triple-layer insulators [J].

Endoh, Akira ;

Yamashita, Yoshimi ;

Hirose, Nobumitsu ;

Hikosaka, Kohki ;

Matsui, Toshiaki ;

Hiyamizu, Satoshi ;

Mimura, Takashi .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B) :3364-3367

[4] DELAY TIME ANALYSIS FOR 0.4-MUM TO 5-MUM-GATE INALAS-INGAAS HEMTS [J].

ENOKI, T ;

ARAI, K ;

ISHII, Y .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (11) :502-504

[5]

Inoue T, 2003, IEICE T ELECTRON, VE86C, P2065

[6] AlGaN/GaN HEMTs - An overview of device operation and applications [J].

Mishra, UK ;

Parikh, P ;

Wu, YF .

PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1022-1031

[7] Study of impact of access resistance on high-frequency performance of AlGaN/GaN HEMTs by measurements at low temperatures [J].

Nidhi ;

Palacios, Tomas ;

Chakraborty, Arpan ;

Keller, Stacia ;

Mishra, Umesh K. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (11) :877-880

[8] Intrinsic transit delay and effective electron velocity of AlGaN/GaN high electron mobility transistors [J].

Suemitsu, T ;

Shiojima, K ;

Makimura, T ;

Shigekawa, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7) :L211-L213

[9] Novel high-yield trilayer resist process for 0.1 mu m T-gate fabrication [J].

Wakita, AS ;

Su, CY ;

Rohdin, H ;

Liu, HY ;

Lee, A ;

Seeger, J ;

Robbins, VM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06) :2725-2728

[10] Effect of bottom SiN thickness for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors using SiN/SiO2/SiN triple-layer insulators [J].