Spontaneous pattern formation on ion bombarded Si(001)

被引：289

作者：

Erlebacher, J ^{[1
]}

Aziz, MJ

Chason, E

Sinclair, MB

Floro, JA

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.82.2330

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Spectroscopic light scattering was used to monitor periodic ripple evolution on Si(001) in situ during Ar+ sputtering. Analysis indicates that under high flux the concentration of mobile species on the surface is temperature and ion flux independent. This is due to an effect of ion collision cascades on the concentration of mobile species. We thereby measure the migration energy on the surface to be 1.2 +/- 0.1 eV. The technique is generalizable to any material, including high temperature and insulating materials for which surface migration energies are notoriously difficult to measure.

引用

页码：2330 / 2333

页数：4

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