Compensation mechanism for N acceptors in ZnO

被引：367

作者：

Lee, EC ^{[1
]}

Kim, YS ^{[1
]}

Jin, YG ^{[1
]}

Chang, KJ ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.64.085120

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a mechanism for the compensation of N acceptors in ZnO through real-space multigrid electronic structure calculations within the local-density-functional approximation. We find that at low N doping levels using a normal N-2 source, O vacancies are the main compensating donors for N acceptors, while N acceptors are compensated via the formation of defect complexes with Zn antisites at high doping levels, When an active plasma N-2 gas is used to increase the N solubility, N acceptors are still greatly compensated by N-2 molecules at oxygen sites and N-acceptor-N-2 complexes, explaining the difficulty in achieving low-resistivity p-type ZnO.

引用

页数：5

共 32 条

[21] Growth of p-type zinc oxide films by chemical vapor deposition
Minegishi, K
Koiwai, Y
Kikuchi, Y
Yano, K
Kasuga, M
Shimizu, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11A): : L1453 - L1455
[22] DOPANT AND DEFECT ENERGETICS - SI IN GAAS
NORTHRUP, JE
ZHANG, SB
[J]. PHYSICAL REVIEW B, 1993, 47 (11): : 6791 - 6794
[23] DOPING OF NITROGEN ACCEPTORS INTO ZNSE USING A RADICAL BEAM DURING MBE GROWTH
OHKAWA, K
KARASAWA, T
MITSUYU, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 797 - 801
[24] P-TYPE ZNSE BY NITROGEN ATOM BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
PARK, RM
TROFFER, MB
ROULEAU, CM
DEPUYDT, JM
HAASE, MA
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (20) : 2127 - 2129
[25] Preparation and some properties of nitrogen-mixed ZnO thin films
Sato, Y
Sato, S
[J]. THIN SOLID FILMS, 1996, 281 : 445 - 448
[26] Native defects and impurities in InN:: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials
Stampfl, C
Van de Walle, CG
Vogel, D
Krüger, P
Pollmann, J
[J]. PHYSICAL REVIEW B, 2000, 61 (12): : R7846 - R7849
[27] Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films
Tang, ZK
Wong, GKL
Yu, P
Kawasaki, M
Ohtomo, A
Koinuma, H
Segawa, Y
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (25) : 3270 - 3272
[28] Zinc self-diffusion, electrical properties, and defect structure of undoped, single crystal zinc oxide
Tomlins, GW
Routbort, JL
Mason, TO
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 117 - 123
[29] EFFICIENT PSEUDOPOTENTIALS FOR PLANE-WAVE CALCULATIONS
TROULLIER, N
MARTINS, JL
[J]. PHYSICAL REVIEW B, 1991, 43 (03) : 1993 - 2006
[30] Hydrogen as a cause of doping in zinc oxide
Van de Walle, CG
[J]. PHYSICAL REVIEW LETTERS, 2000, 85 (05) : 1012 - 1015

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