EXAFS studies of the local atomic structure of nanocrystalline GaAs

被引：2

作者：

Valeev, RG

Deev, AN

Rutz, YV

Babanov, YA

Krylov, PN

Kobziev, VF

Lomaeva, SF

机构：

[1] Russian Acad Sci, Inst Physicotech, Ural Div, Izhevsk 426000, Russia

[2] Russian Acad Sci, Inst Met Phys, Ural Div, Sverdlovsk 620219, Russia

[3] Udmurt State Univ, Izhevsk 426034, Russia

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 06期

关键词：

D O I：

10.1134/1.1379391

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Conditions were considered for producing GaAs nanocrystalline films by a thermal method on the basis of a UVN-71-P3 modernized vacuum setup using three evaporator types. The extended X-ray absorption fine structure (EXAFS) method was applied to study the local atomic structure of the samples produced. (C) 2001 MAIK "Nauka/Interperiodica".

引用

页码：627 / 629

页数：3