Influence of the Electron Beam and the Choice of Heating Membrane on the Evolution of Si Nanowires' Morphology in In Situ TEM

被引:3
作者
Shen, Ya [1 ]
Zhao, Xuechun [1 ]
Gong, Ruiling [1 ]
Ngo, Eric [2 ]
Maurice, Jean-Luc [2 ]
Cabarrocas, Pere Roca, I [2 ]
Chen, Wanghua [1 ]
机构
[1] Ningbo Univ, Sch Phys Sci & Technol, Ningbo 315211, Peoples R China
[2] Inst Polytech Paris, Ecole Polytech, CNRS, Lab Phys Interfaces & Couches Minces LPICM, F-91128 Palaiseau, France
关键词
electron beam irradiation; silicon nanowire; growth; TEM; GROWTH; MANIPULATION; IRRADIATION; MICROSCOPY;
D O I
10.3390/ma15155244
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We used in situ transmission electron microscopy (TEM) to observe the dynamic changes of Si nanowires under electron beam irradiation. We found evidence of structural evolutions under TEM observation due to a combination of electron beam and thermal effects. Two types of heating holders were used: a carbon membrane, and a silicon nitride membrane. Different evolution of Si nanowires on these membranes was observed. Regarding the heating of Si nanowires on a C membrane at 800 degrees C and above, a serious degradation dependent on the diameter of the Si nanowire was observed under the electron beam, with the formation of Si carbide. When the membrane was changed to Si nitride, a reversible sectioning and welding of the Si nanowire was observed.
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页数:10
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