Influence of flash sintering on the ionic conductivity of 8 mol% yttria stabilized zirconia

被引:36
作者
Vendrell, Xavier [1 ]
Yadav, Devinder [2 ,4 ]
Raj, Rishi [2 ,3 ]
West, Anthony R. [1 ]
机构
[1] Univ Sheffield, Dept Mat Sci & Engn, Sheffield S1 3JD, S Yorkshire, England
[2] Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA
[3] Univ Colorado, Mat Sci Engn Program, Boulder, CO 80309 USA
[4] Indian Inst Technol, Dept Met & Mat Engn, Patna 801106, Bihar, India
基金
欧盟地平线“2020”;
关键词
SOFC; Yttria-stabilized zirconia; Flash-sintering; Ionic conductivity; SINGLE-CRYSTAL; IMPEDANCE SPECTROSCOPY; MIXED CONDUCTORS; ELECTROLYTES; FIELD; TEMPERATURE; RESISTIVITY; VOLTAGE; MODEL; AC;
D O I
10.1016/j.jeurceramsoc.2018.12.048
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The ionic conductivity of flash-sintered, polycrystalline 8 mol% yttria stabilized zirconia (8YSZ) was enhanced compared with that of conventionally-sintered specimens. Flash sintering was carried out at a furnace temperature of 850 degrees C with an electric field of 100 V cm(-1) to initiate flash. The current density limit was varied between 60 and 100 mA mm(-2). Post-flash impedance measurements over the range 215-900 degrees C showed that both bulk and grain boundary conductivities had increased with the increased current density limit which was set prior to flash. The conductivity increases post-flash were ionic, not electronic, although electronic conductivity probably occurred, in addition to ionic conductivity, during flash. The conductivity increases were not attributable to sample densification or microstructural changes. The higher ionic conductivities are attributed to a change in YSZ defect structure that led to an increased concentration of mobile charge carriers; possible explanations for this are discussed.
引用
收藏
页码:1352 / 1358
页数:7
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