Highly Reliable Spin-coated Titanium Dioxide Dielectric

Dielectric degradation as low as 0.3 % has been observed for a highly reliable Titanium dioxide (TiO2) film after constant voltage stressing (CVS) with -4 V for 10(5) second at room temperature (300 K). The film was fabricated by sol-gel spin-coating method on a lightly doped p-Si (similar to 10(15) cm(-3)) substrate. The equivalent oxide thickness (EOT) is 7 nm with a dielectric constant 33 (at 1 MHz). Metal-Oxide-Semiconductor (MOS) capacitors have been fabricated with an optimum annealing temperature of 800 degrees C for one hour in a preheated furnace. The dielectric degradation is annealing temperature dependent. A degradation of 1.4 %, 1.2 % and 1.1 % has been observed for 400 degrees C, 600 degrees C and 1000 degrees C temperature annealed MOS respectively. The dielectric degradation increases below or above the optimum temperature of annealing.