Rhenium dinitride: Carrier transport in a novel transition metal dinitride layered crystal

被引：10
作者：
Onodera, Momoko [1 ]
Kawamura, Fumio [2 ]
Nguyen Thanh Cuong [3 ]
Watanabe, Kenji [2 ]
Moriya, Rai [1 ]
Masubuchi, Satoru [1 ]
Taniguchi, Takashi [2 ]
Okada, Susumu [3 ]
Machida, Tomoki [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan
[2] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[3] Univ Tsukuba, Grad Sch Pure & Appl Sci, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058571, Japan
来源：
APL MATERIALS | 2019年 / 7卷 / 10期
基金：
日本科学技术振兴机构;
关键词：
CHEMICAL-VAPOR-DEPOSITION; SUPERCONDUCTING PROPERTIES; HIGH-PRESSURE; FEW-LAYER; RESE2; MONOLAYER; ANISOTROPY; FIELD;
D O I：
10.1063/1.5118713
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Rhenium dinitride (ReN2) is a newly synthesized layered transition metal dinitride. We present the first experimental investigation of the electrical transport properties of ReN2 by exfoliating the ReN2 crystal into thin films. The carrier transport measurements reveal that ReN2 is a metal. Furthermore, ReN2 exhibits suppression of resistance due to superconductivity at temperatures below 10 K. The critical magnetic fields differ significantly depending on the direction of the applied magnetic field, suggesting that ReN2 is an anisotropic layered superconductor. (C) 2019 Author(s).
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页数：5
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