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Modulation Scheme Analysis for High-Efficiency Three-Phase Buck-Type Rectifier Considering Different Device Combinations
被引:11
作者:
Guo, Ben
[1
]
Wang, Fei
[1
]
Burgos, Rolando
[2
]
Aeloiza, Eddy
[3
]
机构:
[1] Univ Tennessee, Dept Elect Engn & Comp Sci, Ctr Ultra Wide Area Resilient Elect Energy Transm, Knoxville, TN 37996 USA
[2] Virginia Tech, Bradley Dept Elect & Comp Engn, CPES, Blacksburg, VA 24061 USA
[3] ABB Corp Res, Raleigh, NC 27606 USA
基金:
美国国家科学基金会;
关键词:
Buck rectifier;
high efficiency;
modulation;
reverse blocking insulated-gate bipolar transistor (IGBT);
PFC RECTIFIER;
DESIGN;
PERFORMANCE;
LOSSES;
IGBT;
AC;
D O I:
10.1109/TPEL.2014.2364582
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The three-phase buck-type rectifier features a stepdown ac-dc conversion function, smaller filter size, inrush current limiting capability, and potential for high efficiency, where its switching loss is dependent on the modulation scheme and the specific semiconductors used. In this paper, three different device combinations are compared through experiments on their switching characteristics for the buck rectifier application. It is shown that the switching performance of two series-connected devices becomes worse than a single device due to the superposition of the nonideal semiconductor characteristics. Moreover, the switching loss in the commutation between two switches is usually higher than the one in the commutation between a switch and the freewheeling diode. Taking into consideration both types of commutations, the switching loss of the buck rectifier is then modeled and the analytical equations are derived for four space vector modulation schemes. According to the analysis, each modulation scheme has its own field for high-efficiency application. The most advantageous modulation scheme is identified in this paper for each of the device combinations investigated.
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页码:4750 / 4761
页数:12
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