Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

被引：4
作者：
Iba, Satoshi [1 ]
Okamoto, Ryogo [2 ]
Obu, Koki [2 ]
Obata, Yuma [2 ]
Ohno, Yuzo [1 ,2 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, Japan
[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan
来源：
MICROMACHINES | 2021年 / 12卷 / 09期
关键词：
molecular beam epitaxy; GaAs (110); photoluminescence; spin relaxation; MOLECULAR-BEAM EPITAXY; GAAS; 110; RELAXATION; LIGHT; ELECTRONS; LIFETIME; KINETICS; GROWTH; FILMS; TIME;
D O I：
10.3390/mi12091112
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (tau(PL)), and electron spin relaxation times (tau(s)) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature T-g (430-600 degrees C) and a high V/III flux ratio using As-2. At 530 degrees C < T-g < 580 degrees C, we found that the quality of the heterointerfaces is significantly improved, resulting in tau(PL)similar to 40 ns at RT, one order of magnitude longer than those reported so far. Long tau(s) (similar to 6 ns) is also observed at RT.
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页数：11
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