Magnetoresistance of ferromagnetic single-electron transistors

被引：4
|
作者：
Karlsson, C [1 ]
Wang, XH [1 ]
机构：
[1] Univ Lund, Dept Theoret Phys, S-22362 Lund, Sweden
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 22期
关键词：
D O I：
10.1063/1.1330561
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the magnetoresistance of the single-electron transistor made of ferromagnetic leads and island. By lowering the temperature, the Coulomb blockade of the single electron tunneling is enhanced, which in turn influences the magnetoresistance of the device. The corresponding magnetoresistance ratio as a function of the temperature is studied by taking into account both the spin-dependent tunneling processes and the Coulomb blockade effect. Finally, we determine the parameter range, in which the ferromagnetic single-electron transistor can be used as a device with the magnetoresistance ratio enhanced by the Coulomb blockade effect. (C) 2000 American Institute of Physics. [S0003-6951(00)04449-1].
引用
收藏
页码：3618 / 3620
页数：3
相关论文
共 50 条
  • [21] Spin accumulation and cotunneling effects in ferromagnetic single-electron transistors
    Martinek, J
    Barnas, J
    Maekawa, S
    Schoeller, H
    Schön, G
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 240 (1-3) : 143 - 145
  • [22] Single-electron transistors
    Hadley, P
    Lientschnig, G
    Lai, MJ
    COMPOUND SEMICONDUCTORS 2002, 2003, 174 : 125 - 132
  • [23] Single-electron transistors
    Devoret, M
    Glattli, C
    PHYSICS WORLD, 1998, 11 (09) : 29 - 33
  • [24] Silicon single-electron transistors and single-electron CCD
    Takahashi, Y
    Fujiwara, A
    Ono, Y
    Inokawa, H
    MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY, 2002, 686 : 181 - 191
  • [25] Non-equilibrium spin accumulation in ferromagnetic single-electron transistors
    A. Brataas
    Yu.V. Nazarov
    J. Inoue
    G.E.W. Bauer
    The European Physical Journal B - Condensed Matter and Complex Systems, 1999, 9 : 421 - 430
  • [26] Non-equilibrium spin accumulation in ferromagnetic single-electron transistors
    Brataas, A
    Nazarov, YV
    Inoue, J
    Bauer, GEW
    EUROPEAN PHYSICAL JOURNAL B, 1999, 9 (03): : 421 - 430
  • [27] Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors
    Liu, R. S.
    Pettersson, H.
    Michalak, L.
    Canali, C. M.
    Suyatin, D.
    Samuelson, L.
    APPLIED PHYSICS LETTERS, 2007, 90 (12)
  • [28] Graphene single-electron transistors
    Ihn, T.
    Guettinger, J.
    Molitor, F.
    Schnez, S.
    Schurtenberger, E.
    Jacobsen, A.
    Hellmueller, S.
    Frey, T.
    Droescher, S.
    Stampfer, C.
    Ensslin, K.
    MATERIALS TODAY, 2010, 13 (03) : 44 - 50
  • [29] Theoretical analysis of transport in ferromagnetic single-electron transistors in the sequential tunnelling regime
    Wisniewska, J.
    Weymann, I.
    MATERIALS SCIENCE-POLAND, 2008, 26 (03): : 715 - 722
  • [30] Spin polarization and magneto-Coulomb oscillations in ferromagnetic single-electron transistors
    Ootuka, Y
    Matsuda, R
    Ono, K
    Shimada, H
    PHYSICA B-CONDENSED MATTER, 2000, 280 (1-4) : 394 - 398
12345