Magnetoresistance of ferromagnetic single-electron transistors

被引：4
|
作者：
Karlsson, C [1 ]
Wang, XH [1 ]
机构：
[1] Univ Lund, Dept Theoret Phys, S-22362 Lund, Sweden
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 22期
关键词：
D O I：
10.1063/1.1330561
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the magnetoresistance of the single-electron transistor made of ferromagnetic leads and island. By lowering the temperature, the Coulomb blockade of the single electron tunneling is enhanced, which in turn influences the magnetoresistance of the device. The corresponding magnetoresistance ratio as a function of the temperature is studied by taking into account both the spin-dependent tunneling processes and the Coulomb blockade effect. Finally, we determine the parameter range, in which the ferromagnetic single-electron transistor can be used as a device with the magnetoresistance ratio enhanced by the Coulomb blockade effect. (C) 2000 American Institute of Physics. [S0003-6951(00)04449-1].
引用
收藏
页码：3618 / 3620
页数：3
相关论文
共 50 条
  • [1] Enhancement of tunnel magnetoresistance in ferromagnetic single-electron transistors
    Matsuda, R
    Kanda, A
    Ootuka, Y
    PHYSICA B-CONDENSED MATTER, 2003, 329 : 1304 - 1305
  • [2] Linear-response conductance and magnetoresistance of ferromagnetic single-electron transistors
    Brataas, A
    Wang, XH
    PHYSICAL REVIEW B, 2001, 64 (10):
  • [3] Magnetoresistance in single-electron transistors comprising a superconducting island with ferromagnetic leads
    Mizugaki, Yoshinao
    Takiguchi, Masashi
    Tamura, Nobuyuki
    Shimada, Hiroshi
    28TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT28), 2018, 969
  • [4] Tunnel magnetoresistance on ferromagnetic single-electron transistors with multiple tunnel junction
    Shirakashi, J
    Takemura, Y
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 7365 - 7367
  • [5] Magnetoresistance modulation in single-electron transistors
    Jalil, MBA
    IEEE TRANSACTIONS ON MAGNETICS, 2003, 39 (05) : 2818 - 2820
  • [6] Large magnetoresistance ratio in ferromagnetic single-electron transistors in the strong tunneling regime
    Wang, XH
    Brataas, A
    PHYSICAL REVIEW LETTERS, 1999, 83 (24) : 5138 - 5141
  • [7] Nanoscaled Ferromagnetic Single-Electron Transistors
    Liu, R. S.
    Pettersson, H.
    Suyatin, D.
    Michalak, L.
    Canali, C. M.
    Samuelson, L.
    2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, : 420 - +
  • [8] Resistively coupled ferromagnetic single-electron transistors
    Shirakashi, J
    Takemura, Y
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) : 7442 - 7444
  • [9] Transport characteristics of ferromagnetic single-electron transistors
    Weymann, I
    Barnas, J
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 236 (03): : 651 - 660
  • [10] Resistively coupled ferromagnetic single-electron transistors
    Shirakashi, J.-I., 1600, American Institute of Physics Inc. (91):
12345