Shape of SiC bulk single crystal grown by sublimation

被引：6

作者：

Nishizawa, S ^{[1
]}

Kitou, Y ^{[1
]}

Bahng, W ^{[1
]}

Oyanagi, N ^{[1
]}

Khan, MN ^{[1
]}

Arai, K ^{[1
]}

机构：

[1] Electrotech Lab, UPR Ultra Low Loss Power Device Technol Res Body, Adv Power Devices Lab, R&D Assoc Future Electron Device, Tsukuba, Ibaraki 3058568, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

crystal shape; numerical simulation; sublimation growth; temperature gradient;

D O I：

10.4028/www.scientific.net/MSF.338-342.99

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Numerical simulation of sublimation SiC bulk single crystal growth was performed. Electromagnetic and temperature fields in a growth furnace were analyzed numerically. The relation between grown crystal shape and temperature distribution in a growth cavity was discussed. It is pointed out that the crystal shape has a close relationship with temperature distribution. By modifying the crucible design and temperature distribution in a growth cavity, it is possible to enhance the enlargement of grown crystal, and also possible to keep grown surface flat.

引用

页码：99 / 102

页数：4

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