Fabrication and characterization of field-effect transistor device with C2v isomer of Pr@C82

被引：25

作者：

Nagano, T

Kuwahara, E

Takayanagi, T

Kubozono, Y ^{[1
]}

Fujiwara, A

机构：

[1] Okayama Univ, Dept Chem, Okayama 7008530, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawaguchi 3220012, Japan

来源：

CHEMICAL PHYSICS LETTERS | 2005年 / 409卷 / 4-6期

关键词：

D O I：

10.1016/j.cplett.2005.05.019

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A field-effect transistor (FET) device was fabricated with thin films of C-2v isomer of Pr@C-82. This device apparently showed n-channel normally on type FET properties, where non-zero current was observed at the gate-source voltage, V-GS, of 0 V. Normally off FET properties were observed by subtraction of the non-zero current from the drain current. Thus the normally on properties are ascribed to the high bulk current caused by the small energy gap of approximate to 0.3 eV. The field-effect mobility for this FET was 1.5 x 10(-4) cm(2) V-1 s(-1) at 320 K, being comparable to those of other endohedral metallofullerene FET devices. (c) 2005 Elsevier B.V. All rights reserved.

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页码：187 / 191

页数：5

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