Electrical characteristics and TDDB breakdown mechanism of N2-RTA-treated Hf-based high-κ gate dielectrics

被引：10

作者：

Lin, Cheng-Li ^{[1
]}

Chou, Mei-Yuan ^{[1
]}

Kang, Tsung-Kuei ^{[1
]}

Wu, Shich-Chuan ^{[2
]}

机构：

[1] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

[2] Natl Nano Device Labs, Hsinchu, Taiwan

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 06期

关键词：

HfO2; HfSiOx; high-kappa gate dielectric; RTA treatment; Oxide trap; TDDB reliability; Breakdown mechanism; CONSTANT-VOLTAGE STRESS; HIGH-K; RELIABILITY CHARACTERISTICS; SEMICONDUCTOR CAPACITORS; OXIDE; DEPOSITION; SILICON; LAYER; FILMS; SI;

D O I：

10.1016/j.mee.2010.12.028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study investigates the effects of rapid thermal annealing (RTA) in nitrogen ambient on HfO2 and HfSiOx gate dielectrics, including their electrical characteristics, film properties, TDDB reliability and breakdown mechanism. The optimal temperature for N-2 RTA treatment is also investigated. The positive oxide trap charges (oxygen vacancies) in HfO2 and HfSiOx dielectric films can be reduced by the thermal annealing, but as the annealing temperature increased, many positive oxide trap charges (oxygen vacancies) with shallow or deep trap energy level will be formed in the grain boundaries, degrading the electrical characteristics, and changing the breakdown mechanism. We believe that variation in the number of positive oxide trap charges (oxygen vacancies) with shallow or deep trap energy levels is the main cause of the CV shift and difference in the breakdown behaviors between HfO2 and HfSiOx dielectrics. With respect to CV characteristics and TDDB reliability, the optimal temperature for N-2 RTA treatment is in the range 500-600 degrees C and 800-900 degrees C, respectively. (c) 2010 Elsevier B.V. All rights reserved.

引用

页码：950 / 958

页数：9

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