Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2

被引：178

作者：

Corbett, Chris M. ^{[1
]}

McClellan, Connor ^{[1
]}

Rai, Amritesh ^{[1
]}

Sonde, Sushant Sudam ^{[1
]}

Tutuc, Emanuel ^{[1
]}

Banerjee, Sanjay K. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Elect Engn, Austin, TX 78712 USA

来源：

ACS NANO | 2015年 / 9卷 / 01期

关键词：

rhenium disulfide; transistor; TMD; gain; saturation; mobility; CONTACT RESISTANCE; LAYER MOS2; BANDGAP; FETS;

D O I：

10.1021/nn505354a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the fabrication and device characteristics of exfoliated, few-layer, dual-gated ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room temperature I-on/(I)o(ff) of 10 (5). Many devices were studied with a maximum intrinsic mobility of 12 cm2 center dot V1 center dot s1 at room temperature and 26 cm(2) center dot V-1 center dot s(-1) at 77 K. The Cr/Au-ReS2 contact resistance determined using the transfer length method is gate-bias dependent and ranges from 175 k Omega center dot mu m to 5 k Omega center dot mu m, and shows an exponential dependence on back-gate voltage indicating Schottky barriers at the source and drain contacts. Dual-gated ReS2 FETs demonstrate current saturation, voltage gain, and a subthreshold swing of 148 mV/decade.

引用

页码：363 / 370

页数：8

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