EPITAXIAL OVERGROWTH OF INP AND GAAS MICROPORES, MICROCAVITIES AND MICROLAMELLAS BY INAS AND INGAAS

被引：0

作者：

Nohavica, Dusan ^{[1
]}

Grym, Jan ^{[1
]}

Hulicius, Eduard ^{[2
]}

Pangrac, Jiri ^{[2
]}

Gladkov, Petar ^{[1
]}

Jarchovsky, Zdenek ^{[1
]}

机构：

[1] Acad Sci Czech Republic, Inst Photon & Elect, Chaberska 57, CR-18251 Prague 8, Czech Republic

[2] Acad Sci Czech Republic, Inst Phys, CZ-16200 Prague 6, Czech Republic

来源：

NANOCON 2010, 2ND INTERNATIONAL CONFERENCE | 2010年

关键词：

micropors; InP; GaAs; pores formation; heat treatment; regrowth; POROUS SILICON; FABRICATION; SUBSTRATE; GROWTH;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Structural features and optical properties of micro and nano-porous InP and GaAs substrates used for an epitaxial overgrowth of thin films were investigated. Both crystalographically oriented (CO) and current line oriented (CLO) pore networks were created by electrochemical dissolution. Heat treatment of InP pores at 650 degrees C and GaAs pores at 750-850 degrees C converted them into microcavities maintaining almost the same crystallographic direction. Mass transport was responsible for the pore conversion. The effect of "anion" vapour pressure was proved to be crucial for the microcavity formation since it influenced the mass transport during the heat treatment. Electron microscopy and photoluminescence experiments revealed the absence of significant extended defects, both after the pore and cavitity formation. The capability of improved structural quality homo-and hetero-epitaxially overgrown films on the porous InP, was also demonstrated by LPE growth of InP and InAs. Overgrowth of the porous GaAs substrates by ternary GaInAs layers with different lattice mismatch was realised by MOVPE technology.

引用

页码：28 / 33

页数：6

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