Thin bismuth oxide films prepared through the sol-gel method

被引：36

作者：

Weidong, He ^{[1
]}

Wei, Qin ^{[1
]}

Xiaohong, Wu ^{[1
]}

Hailong, Ning ^{[1
]}

机构：

[1] Harbin Inst Technol, Harbin 150001, Peoples R China

来源：

MATERIALS LETTERS | 2007年 / 61卷 / 19-20期

关键词：

sol-gel preparation; thin films; bismuth oxide; annealing temperature;

D O I：

10.1016/j.matlet.2007.01.061

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, thin and uniform bismuth oxide films were prepared by the sol-gel method. These films were annealed at different temperatures. X-ray diffraction, X-ray photoelectron spectroscopy, atom force microscopy techniques, a surface profiler and a spectrophotometer were applied to characterize these bismuth oxide films annealed at different temperatures. The results show that different annealing temperatures cause the transformation between monoclinic phase and tetragonal phase of bismuth oxides, and that bismuth oxide films annealed at 550 degrees C contain the highest intensity of tetragonal phase of bismuth oxides. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：4100 / 4102

页数：3

共 17 条

[1] Low-temperature electrodeposition of the high-temperature cubic polymorph of bismuth(III) oxide [J].