Deep traps in high resistivity AlGaN films

被引：55
作者：
Polyakov, AY
Smirnov, NB
Govorkov, AV
Redwing, JM
机构：
[1] Inst Rare Met, Moscow 109017, Russia
[2] EPITRONICS ATMI, Phoenix, AZ 85027 USA
来源：
SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 05期
关键词：
D O I：
10.1016/S0038-1101(98)00089-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Deep levels were studied in undoped high resistivity AlxGa1-xN films grown by metal organic chemical vapor deposition on sapphire. Strong temperature quenching of photocurrent was observed and explained by the presence of hole traps with energies ranging from 0.2 to 0.36 eV for AlGaN compositions in the range 0.05 < x < 0.25. Similar hole traps were detected by means of photoinduced current transient spectroscopy (PICTS) which also revealed the presence of additional hole traps situated 0.85-1.0 eV above the top of the valence band. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：831 / 838
页数：8
相关论文
共 27 条
[1]  
Akasaki I., 1994, PROPERTIES GROUP 3 N, P222
[2]   INVESTIGATION OF DEEP LEVELS IN HIGH-RESISTIVITY BULK MATERIALS BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY .1. REVIEW AND ANALYSIS OF SOME BASIC PROBLEMS [J].
BALLAND, JC ;
ZIELINGER, JP ;
NOGUET, C ;
TAPIERO, M .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1986, 19 (01) :57-70
[3]   MICROWAVE PERFORMANCE OF GAN MESFETS [J].
BINARI, SC ;
ROWLAND, LB ;
KRUPPA, W ;
KELNER, G ;
DOVERSPIKE, K ;
GASKILL, DK .
ELECTRONICS LETTERS, 1994, 30 (15) :1248-1249
[4]  
BUBE RH, 1960, PHOTOCONDUCTIVITY SO, pCH11
[5]   75 angstrom GaN channel modulation doped field effect transistors [J].
Burm, J ;
Schaff, WJ ;
Eastman, LF ;
Amano, H ;
Akasaki, I .
APPLIED PHYSICS LETTERS, 1996, 68 (20) :2849-2851
[6]  
GOTZ W, 1994, APPL PHYS LETT, V65, P463, DOI 10.1063/1.112337
[7]  
GOTZ W, 1995, APPL PHYS LETT, V66, P1340, DOI 10.1063/1.113235
[8]   A donorlike deep level defect in Al0.12Ga0.88N characterized by capacitance transient spectroscopies [J].
Gotz, W ;
Johnson, NM ;
Bremser, MD ;
Davis, RF .
APPLIED PHYSICS LETTERS, 1996, 69 (16) :2379-2381
[9]  
Hacke P, 1996, APPL PHYS LETT, V68, P1362, DOI 10.1063/1.116080
[10]   DEEP-LEVEL SPECTROSCOPY IN HIGH-RESISTIVITY MATERIALS [J].
HURTES, C ;
BOULOU, M ;
MITONNEAU, A ;
BOIS, D .
APPLIED PHYSICS LETTERS, 1978, 32 (12) :821-823
123