Time-dependent dielectric breakdown of thermal oxides on 4H-SiC

被引：14

作者：

Matocha, Kevin ^{[1
]}

Beaupre, Richard ^{[1
]}

机构：

[1] GE Global Res, 1 Res Circle, Niskayuna, NY 12309 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷

关键词：

reliability; time-dependent dielectric breakdown;

D O I：

10.4028/www.scientific.net/MSF.556-557.675

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thermal oxides on 4H-SiC are characterized using time-dependent dielectric breakdown techniques at electric fields between 6 and 10 MV/cm. At 250 degrees C, oxides thermally-gown using N2O with NO annealing achieve a mean time to failure (MTTF) of 2300 hours at 6 MV/cm. Oxides grown in steam with NO annealing show approximately four times longer MTTF than N2O-grown oxides. At electric fields greater than 8 MV/cm, Fowler-Nordheim tunneling significantly reduces the expected failure times. For this reason, extrapolation of mean-time to failure at low fields must be performed by datapoints measured at lower electric fields.

引用

页码：675 / +

页数：2